Design and Implementation of 1 MHz DC-DC LLC Resonant Converter with GaN Enhancement Mode HEMT

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Gallium Nitride power transistor is the power devices with fast switching characteristics. This feature allows the converters to reduce switching losses for operating at higher frequency. A 1 MHz LLC half bridge resonant converter with GaN enhancement mode HEMT (GaN E-HEMT) is implemented. The power density of the power converter is improved with higher switching frequency and achieve higher efficiency with soft switching technique. The operating principle of half bridge LLC resonant converter is discussed and the characteristics and gate driver circuit requirements of the wide bandgap devices are investigated. Finally, the digital signal processor, TMS320F28035, is used to realize the laboratory prototype with the input voltage 400 V, the output voltage 12 V, and rated output power 240W. The synchronous rectifier is used on the secondary side to reduce conduction loss to improve efficiency. The experimental results show that efficiency can be as high as 94.1% at 50% load and 92.1% at full load.

Original languageEnglish
Title of host publication2022 IEEE 7th Southern Power Electronics Conference, SPEC 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350399882
DOIs
Publication statusPublished - 2022
Event7th IEEE Southern Power Electronics Conference, SPEC 2022 - Nadi, Fiji
Duration: 2022 Dec 52022 Dec 8

Publication series

Name2022 IEEE 7th Southern Power Electronics Conference, SPEC 2022

Conference

Conference7th IEEE Southern Power Electronics Conference, SPEC 2022
Country/TerritoryFiji
CityNadi
Period22-12-0522-12-08

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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