TY - GEN
T1 - Design and Implementation of Full-Bridge Resonant Converter with GaN E-HEMT
AU - Liu, Pin Yi
AU - Liang, Tsomg Juu
AU - Chen, Kai Hui
AU - Nghiep, Huynh Kim Kien
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021/5/24
Y1 - 2021/5/24
N2 - Increasing the switching frequency of the power converters can increase the power density, but it will cause more switching losses. Gallium nitride enhancement mode high electron mobility transistors (GaN E-HEMTs) have fast switching speed characteristic, it is suitable for high switching frequency applications. In this paper, GaN E-HEMTs are used as the main switches of the full-bridge resonant converter with soft-switching to increase the power density with high frequency operation. The characteristics of GaN E-HEMT are investigated, the operating principles of full-bridge resonant converter are analyzed, and the design considerations of gate drive circuits are discussed in this paper. The digital signal processor, TMS320F28335, is used as the main controller. Finally, an experimental prototype is built with the switching frequency of 1 MHz, the input voltage of 380-420 V, the output voltage of 48 V, and the rated power of 960 W The highest efficiency is 90.5 % at 50 % load.
AB - Increasing the switching frequency of the power converters can increase the power density, but it will cause more switching losses. Gallium nitride enhancement mode high electron mobility transistors (GaN E-HEMTs) have fast switching speed characteristic, it is suitable for high switching frequency applications. In this paper, GaN E-HEMTs are used as the main switches of the full-bridge resonant converter with soft-switching to increase the power density with high frequency operation. The characteristics of GaN E-HEMT are investigated, the operating principles of full-bridge resonant converter are analyzed, and the design considerations of gate drive circuits are discussed in this paper. The digital signal processor, TMS320F28335, is used as the main controller. Finally, an experimental prototype is built with the switching frequency of 1 MHz, the input voltage of 380-420 V, the output voltage of 48 V, and the rated power of 960 W The highest efficiency is 90.5 % at 50 % load.
UR - https://www.scopus.com/pages/publications/85114203853
UR - https://www.scopus.com/pages/publications/85114203853#tab=citedBy
U2 - 10.1109/ECCE-Asia49820.2021.9479268
DO - 10.1109/ECCE-Asia49820.2021.9479268
M3 - Conference contribution
AN - SCOPUS:85114203853
T3 - Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021
SP - 1632
EP - 1637
BT - Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 12th IEEE Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021
Y2 - 24 May 2021 through 27 May 2021
ER -