Design consideration of emitter-base junction structure for InGaP/GaAs heterojunction bipolar transistors

Shiou Ying Cheng, Wen Lung Chang, Hsi Jen Pan, Yung Hsin Shie, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


In this paper, the different designs of emitter-base junction including the employment of the δ-doping sheet and setback layer are presented and studied. A theoretical model is used to analyze the performances of the proposed different InGaP/GaAs heterojunction bipolar transistors (HBTs). Experimentally, a new InGaP/GaAs HBT with a δ-doping sheet and a setback layer inserting between emitter-base heterointerface is fabricated successfully. From the theoretical analysis and experimental results, it is found that the insertion of the δ-doping sheet and the setback layer can effectively eliminate the undesired potential spike at N-InGaP/p+ -GaAs heterointerface. The experimental common-emitter current gain of 280 at collector current of 85 mA and a low offset voltage of 55 mV are achieved. In addition, a current gain of 11 at very small collector current of 0.5 μm without passivation is obtained.

Original languageEnglish
Pages (from-to)297-304
Number of pages8
JournalSolid-State Electronics
Issue number2
Publication statusPublished - 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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