Abstract
An InGaP/GaAs heterojunction bipolar transistor (HBT) with an 50 angstroms undoped spacer and δ-doping sheet at base-emitter heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55 mV are obtained, respectively. This results show that high current gain and low offset voltage can be attained simultaneously without the passivation of emitter-base junction. From the experimental results, it shows that the potential spike is indeed reduced by the employment of an δ-doped layer and spacer simultaneously. On the other hand, theoretical consideration also shows that the potential spike is removed by inserting a δ-doping sheet between the emitter-base heterointerface.
Original language | English |
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Pages | 246-248 |
Number of pages | 3 |
Publication status | Published - 1999 Jan 1 |
Event | Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust Duration: 1998 Dec 14 → 1998 Dec 16 |
Other
Other | Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices |
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City | Perth, WA, Aust |
Period | 98-12-14 → 98-12-16 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials