Design consideration of emitter-base junction structure for InGaP/GaAs heterojunction bipolar transistor

Wen-Chau Liu, J. Y. Chen, W. C. Wang, S. C. Feng, K. H. Yu, J. H. Yan

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

An InGaP/GaAs heterojunction bipolar transistor (HBT) with an 50 angstroms undoped spacer and δ-doping sheet at base-emitter heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55 mV are obtained, respectively. This results show that high current gain and low offset voltage can be attained simultaneously without the passivation of emitter-base junction. From the experimental results, it shows that the potential spike is indeed reduced by the employment of an δ-doped layer and spacer simultaneously. On the other hand, theoretical consideration also shows that the potential spike is removed by inserting a δ-doping sheet between the emitter-base heterointerface.

Original languageEnglish
Pages246-248
Number of pages3
Publication statusPublished - 1999 Jan 1
EventProceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust
Duration: 1998 Dec 141998 Dec 16

Other

OtherProceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
CityPerth, WA, Aust
Period98-12-1498-12-16

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Liu, W-C., Chen, J. Y., Wang, W. C., Feng, S. C., Yu, K. H., & Yan, J. H. (1999). Design consideration of emitter-base junction structure for InGaP/GaAs heterojunction bipolar transistor. 246-248. Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .