Design Considerations with Augmented Spacer Dielectric for Vertically Stacked Gate-All-Around MOSFET,

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	IEEE Semiconductor Interface Specialists Conference
Publication status	Published - 2018 May 21

Cite this

@inproceedings{dd30edaab86746aa9d1dc8d94d71755c,

title = "Design Considerations with Augmented Spacer Dielectric for Vertically Stacked Gate-All-Around MOSFET,",

author = "Huang, {Ya Chi} and Chen, {Shi Hao} and Meng-Hsueh Chiang and Shui-Jinn Wang",

year = "2018",

month = may,

day = "21",

language = "English",

booktitle = "IEEE Semiconductor Interface Specialists Conference",

}