Design of 10-nm-scale recessed asymmetric Schottky barrier MOSFETs

Yaohui Zhang, Jun Wan, Kang L. Wang, Bich Yen Nguyen

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)


We have proposed and simulated a new 10-nm and sub-10 nm n-MOSFET that has a recessed channel and asymmetric source/drain Schottky Contacts (RASC MOSFETs). The recessed channel can effectively suppress short-channel effects, and the asymmetric source/drain contacts in which a higher Schottky barrier at the source contact can yield smaller off-state current while a lower Schottky barrier at the drain can yield larger on-state current. The simulated results show that the device can exhibit an on/off ratio as high as 10 6 and an on-state current of 393 μA/μm with a supply voltage of 1.0 V. Furthermore, the parameters of RASC MOSFETs are rather insensitive to size variations. These characteristics make the 10-nm or even sub-10 nm transistors potentially suitable for logic and memory applications.

Original languageEnglish
Pages (from-to)419-421
Number of pages3
JournalIEEE Electron Device Letters
Issue number7
Publication statusPublished - 2002 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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