Design of a 0.6-V 0.2-mW CMOS MEMS accelerometer

Po Chang Wu, Bin Da Liu, Chih Yuan Yeh, Sheg Hsiang Tseng, Hann Huei Tsai, Ying Zong Juang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper presents a low-voltage low-power monolithic complementary metal-oxide-semiconductor (CMOS) micro-electromechanical-system (MEMS) accelerometer design. This design utilizes low-voltage design techniques without using low-threshold devices or internal supply voltage boosting. The accelerometer, designed in the 0.18-μm CMOS MEMS process, contains the micro-mechanical structure, readout circuits, and a 16-bit delta-sigma analog-to-digital converter (ΔΣ ADC). It occupies an area of only 0.8 × 1 mm2 and draws 0.33 mA of current from a 0.6-V supply. The simulated sensitivity is 3000 LSB/g and the nonlinearity is 0.78% within the ±6 g sensing range.

Original languageEnglish
Title of host publication2015 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages444-445
Number of pages2
ISBN (Electronic)9781479987443
DOIs
Publication statusPublished - 2015 Aug 20
Event2nd IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2015 - Taipei, Taiwan
Duration: 2015 Jun 62015 Jun 8

Publication series

Name2015 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2015

Other

Other2nd IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2015
CountryTaiwan
CityTaipei
Period15-06-0615-06-08

Fingerprint

accelerometers
Accelerometers
microelectromechanical systems
MEMS
CMOS
low voltage
Electric potential
Metals
analog to digital converters
Digital to analog conversion
readout
nonlinearity
thresholds
Networks (circuits)
sensitivity
electric potential
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Artificial Intelligence
  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Instrumentation
  • Media Technology

Cite this

Wu, P. C., Liu, B. D., Yeh, C. Y., Tseng, S. H., Tsai, H. H., & Juang, Y. Z. (2015). Design of a 0.6-V 0.2-mW CMOS MEMS accelerometer. In 2015 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2015 (pp. 444-445). [7216989] (2015 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICCE-TW.2015.7216989
Wu, Po Chang ; Liu, Bin Da ; Yeh, Chih Yuan ; Tseng, Sheg Hsiang ; Tsai, Hann Huei ; Juang, Ying Zong. / Design of a 0.6-V 0.2-mW CMOS MEMS accelerometer. 2015 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 444-445 (2015 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2015).
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abstract = "This paper presents a low-voltage low-power monolithic complementary metal-oxide-semiconductor (CMOS) micro-electromechanical-system (MEMS) accelerometer design. This design utilizes low-voltage design techniques without using low-threshold devices or internal supply voltage boosting. The accelerometer, designed in the 0.18-μm CMOS MEMS process, contains the micro-mechanical structure, readout circuits, and a 16-bit delta-sigma analog-to-digital converter (ΔΣ ADC). It occupies an area of only 0.8 × 1 mm2 and draws 0.33 mA of current from a 0.6-V supply. The simulated sensitivity is 3000 LSB/g and the nonlinearity is 0.78{\%} within the ±6 g sensing range.",
author = "Wu, {Po Chang} and Liu, {Bin Da} and Yeh, {Chih Yuan} and Tseng, {Sheg Hsiang} and Tsai, {Hann Huei} and Juang, {Ying Zong}",
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series = "2015 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2015",
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Wu, PC, Liu, BD, Yeh, CY, Tseng, SH, Tsai, HH & Juang, YZ 2015, Design of a 0.6-V 0.2-mW CMOS MEMS accelerometer. in 2015 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2015., 7216989, 2015 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2015, Institute of Electrical and Electronics Engineers Inc., pp. 444-445, 2nd IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2015, Taipei, Taiwan, 15-06-06. https://doi.org/10.1109/ICCE-TW.2015.7216989

Design of a 0.6-V 0.2-mW CMOS MEMS accelerometer. / Wu, Po Chang; Liu, Bin Da; Yeh, Chih Yuan; Tseng, Sheg Hsiang; Tsai, Hann Huei; Juang, Ying Zong.

2015 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 444-445 7216989 (2015 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2015).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - This paper presents a low-voltage low-power monolithic complementary metal-oxide-semiconductor (CMOS) micro-electromechanical-system (MEMS) accelerometer design. This design utilizes low-voltage design techniques without using low-threshold devices or internal supply voltage boosting. The accelerometer, designed in the 0.18-μm CMOS MEMS process, contains the micro-mechanical structure, readout circuits, and a 16-bit delta-sigma analog-to-digital converter (ΔΣ ADC). It occupies an area of only 0.8 × 1 mm2 and draws 0.33 mA of current from a 0.6-V supply. The simulated sensitivity is 3000 LSB/g and the nonlinearity is 0.78% within the ±6 g sensing range.

AB - This paper presents a low-voltage low-power monolithic complementary metal-oxide-semiconductor (CMOS) micro-electromechanical-system (MEMS) accelerometer design. This design utilizes low-voltage design techniques without using low-threshold devices or internal supply voltage boosting. The accelerometer, designed in the 0.18-μm CMOS MEMS process, contains the micro-mechanical structure, readout circuits, and a 16-bit delta-sigma analog-to-digital converter (ΔΣ ADC). It occupies an area of only 0.8 × 1 mm2 and draws 0.33 mA of current from a 0.6-V supply. The simulated sensitivity is 3000 LSB/g and the nonlinearity is 0.78% within the ±6 g sensing range.

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Wu PC, Liu BD, Yeh CY, Tseng SH, Tsai HH, Juang YZ. Design of a 0.6-V 0.2-mW CMOS MEMS accelerometer. In 2015 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 444-445. 7216989. (2015 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2015). https://doi.org/10.1109/ICCE-TW.2015.7216989