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Design of a 0.6-V 0.2-mW CMOS MEMS accelerometer

  • Po Chang Wu
  • , Bin Da Liu
  • , Chih Yuan Yeh
  • , Sheg Hsiang Tseng
  • , Hann Huei Tsai
  • , Ying Zong Juang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a low-voltage low-power monolithic complementary metal-oxide-semiconductor (CMOS) micro-electromechanical-system (MEMS) accelerometer design. This design utilizes low-voltage design techniques without using low-threshold devices or internal supply voltage boosting. The accelerometer, designed in the 0.18-μm CMOS MEMS process, contains the micro-mechanical structure, readout circuits, and a 16-bit delta-sigma analog-to-digital converter (ΔΣ ADC). It occupies an area of only 0.8 × 1 mm2 and draws 0.33 mA of current from a 0.6-V supply. The simulated sensitivity is 3000 LSB/g and the nonlinearity is 0.78% within the ±6 g sensing range.

Original languageEnglish
Title of host publication2015 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages444-445
Number of pages2
ISBN (Electronic)9781479987443
DOIs
Publication statusPublished - 2015 Aug 20
Event2nd IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2015 - Taipei, Taiwan
Duration: 2015 Jun 62015 Jun 8

Publication series

Name2015 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2015

Other

Other2nd IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2015
Country/TerritoryTaiwan
CityTaipei
Period15-06-0615-06-08

All Science Journal Classification (ASJC) codes

  • Artificial Intelligence
  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Instrumentation
  • Media Technology

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