Design of A 3-10 GHZ UWB CMOS T/R switch

K. H. Pao, C. Y. Hsu, H. R. Chuang, C. Y. Chen

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A 3-10 GHz broadband CMOS T/R Switch for ultrawideband (UWB) transceiver is proposed. This broadband CMOS transmit/receive (T/R) Switch is fabricated based on the 0.18 μm 1P6M standard CMOS process. On-chip measurement of the CMOS T/R Switch is performed. The insertion loss of the proposed CMOS T/R Switch is about 3.1 ± 1.3 dB. The return losses at both Input and output terminals are higher than 14 dB. It is also characterized with 25-34 dB isolation and 18-20 dBm input PIdB. The broadband CMOS T/R Switch shows highly linear phase and group delay of 20 ± 10 ps from 10 MHz. to 15 GHz. It can be easily integrated with other CMOS RFICs to form on-chip transceivers for various UWB applications.

Original languageEnglish
Pages (from-to)457-460
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume50
Issue number2
DOIs
Publication statusPublished - 2008 Feb 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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