A 3-10 GHz broadband CMOS T/R Switch for ultrawideband (UWB) transceiver is proposed. This broadband CMOS transmit/receive (T/R) Switch is fabricated based on the 0.18 μm 1P6M standard CMOS process. On-chip measurement of the CMOS T/R Switch is performed. The insertion loss of the proposed CMOS T/R Switch is about 3.1 ± 1.3 dB. The return losses at both Input and output terminals are higher than 14 dB. It is also characterized with 25-34 dB isolation and 18-20 dBm input PIdB. The broadband CMOS T/R Switch shows highly linear phase and group delay of 20 ± 10 ps from 10 MHz. to 15 GHz. It can be easily integrated with other CMOS RFICs to form on-chip transceivers for various UWB applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering