Design of A 3-10 GHZ UWB CMOS T/R switch

K. H. Pao, C. Y. Hsu, Huey-Ru Chuang, C. Y. Chen

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A 3-10 GHz broadband CMOS T/R Switch for ultrawideband (UWB) transceiver is proposed. This broadband CMOS transmit/receive (T/R) Switch is fabricated based on the 0.18 μm 1P6M standard CMOS process. On-chip measurement of the CMOS T/R Switch is performed. The insertion loss of the proposed CMOS T/R Switch is about 3.1 ± 1.3 dB. The return losses at both Input and output terminals are higher than 14 dB. It is also characterized with 25-34 dB isolation and 18-20 dBm input PIdB. The broadband CMOS T/R Switch shows highly linear phase and group delay of 20 ± 10 ps from 10 MHz. to 15 GHz. It can be easily integrated with other CMOS RFICs to form on-chip transceivers for various UWB applications.

Original languageEnglish
Pages (from-to)457-460
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume50
Issue number2
DOIs
Publication statusPublished - 2008 Feb 1

Fingerprint

Ultra-wideband (UWB)
CMOS
switches
Switches
Transceivers
transmitter receivers
broadband
Group delay
chips
Insertion losses
insertion loss
isolation
output

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Pao, K. H. ; Hsu, C. Y. ; Chuang, Huey-Ru ; Chen, C. Y. / Design of A 3-10 GHZ UWB CMOS T/R switch. In: Microwave and Optical Technology Letters. 2008 ; Vol. 50, No. 2. pp. 457-460.
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Design of A 3-10 GHZ UWB CMOS T/R switch. / Pao, K. H.; Hsu, C. Y.; Chuang, Huey-Ru; Chen, C. Y.

In: Microwave and Optical Technology Letters, Vol. 50, No. 2, 01.02.2008, p. 457-460.

Research output: Contribution to journalArticle

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