Design of a 75–110-GHz millimeter-wave 90-nm CMOS highly isolated transmitter/receiver switch by leakage-cancellation technique

Chien Chang Chou, Shih Chiao Huang, Wen Chian Lai, H. C. Kuo, Huey Ru Chuang

Research output: Contribution to journalArticlepeer-review

Abstract

This article presents 75-110-GHz highly isolated T/R switch in 90nm CMOS. The proposed T/R switch circuit design is focused on highly isolation performance which is achieved by using both parallel inductors and leakage-cancellation techniques. To also reduce insertion loss which is also an important design key point, series-shunt single-pole double throw (SPDT) switch with optimizing transistors size and body-floating technique are adopted. From the experiment results, the designed switch has good performance of the return loss, insertion loss and isolation in W-band. Compared with some previously reported works, the designed switch has the best isolation performance of 48 dB at 94-GHz, and IP1dB is > 9dBm, respectively.

Original languageEnglish
Pages (from-to)2725-2731
Number of pages7
JournalMicrowave and Optical Technology Letters
Volume58
Issue number11
DOIs
Publication statusPublished - 2016 Nov 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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