Abstract
This article presents 75-110-GHz highly isolated T/R switch in 90nm CMOS. The proposed T/R switch circuit design is focused on highly isolation performance which is achieved by using both parallel inductors and leakage-cancellation techniques. To also reduce insertion loss which is also an important design key point, series-shunt single-pole double throw (SPDT) switch with optimizing transistors size and body-floating technique are adopted. From the experiment results, the designed switch has good performance of the return loss, insertion loss and isolation in W-band. Compared with some previously reported works, the designed switch has the best isolation performance of 48 dB at 94-GHz, and IP1dB is > 9dBm, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 2725-2731 |
| Number of pages | 7 |
| Journal | Microwave and Optical Technology Letters |
| Volume | 58 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2016 Nov 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
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Design of a 75–110-GHz millimeter-wave 90-nm CMOS highly isolated transmitter/receiver switch by leakage-cancellation technique. / Chou, Chien Chang; Huang, Shih Chiao; Lai, Wen Chian; Kuo, H. C.; Chuang, Huey Ru.
In: Microwave and Optical Technology Letters, Vol. 58, No. 11, 01.11.2016, p. 2725-2731.Research output: Contribution to journal › Article
TY - JOUR
T1 - Design of a 75–110-GHz millimeter-wave 90-nm CMOS highly isolated transmitter/receiver switch by leakage-cancellation technique
AU - Chou, Chien Chang
AU - Huang, Shih Chiao
AU - Lai, Wen Chian
AU - Kuo, H. C.
AU - Chuang, Huey Ru
PY - 2016/11/1
Y1 - 2016/11/1
N2 - This article presents 75-110-GHz highly isolated T/R switch in 90nm CMOS. The proposed T/R switch circuit design is focused on highly isolation performance which is achieved by using both parallel inductors and leakage-cancellation techniques. To also reduce insertion loss which is also an important design key point, series-shunt single-pole double throw (SPDT) switch with optimizing transistors size and body-floating technique are adopted. From the experiment results, the designed switch has good performance of the return loss, insertion loss and isolation in W-band. Compared with some previously reported works, the designed switch has the best isolation performance of 48 dB at 94-GHz, and IP1dB is > 9dBm, respectively.
AB - This article presents 75-110-GHz highly isolated T/R switch in 90nm CMOS. The proposed T/R switch circuit design is focused on highly isolation performance which is achieved by using both parallel inductors and leakage-cancellation techniques. To also reduce insertion loss which is also an important design key point, series-shunt single-pole double throw (SPDT) switch with optimizing transistors size and body-floating technique are adopted. From the experiment results, the designed switch has good performance of the return loss, insertion loss and isolation in W-band. Compared with some previously reported works, the designed switch has the best isolation performance of 48 dB at 94-GHz, and IP1dB is > 9dBm, respectively.
UR - http://www.scopus.com/inward/record.url?scp=84983750339&partnerID=8YFLogxK
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U2 - 10.1002/mop.30137
DO - 10.1002/mop.30137
M3 - Article
AN - SCOPUS:84983750339
VL - 58
SP - 2725
EP - 2731
JO - Microwave and Optical Technology Letters
JF - Microwave and Optical Technology Letters
SN - 0895-2477
IS - 11
ER -