Design of a 75–110-GHz millimeter-wave 90-nm CMOS highly isolated transmitter/receiver switch by leakage-cancellation technique

Chien Chang Chou, Shih Chiao Huang, Wen Chian Lai, H. C. Kuo, Huey Ru Chuang

Research output: Contribution to journalArticle

Abstract

This article presents 75-110-GHz highly isolated T/R switch in 90nm CMOS. The proposed T/R switch circuit design is focused on highly isolation performance which is achieved by using both parallel inductors and leakage-cancellation techniques. To also reduce insertion loss which is also an important design key point, series-shunt single-pole double throw (SPDT) switch with optimizing transistors size and body-floating technique are adopted. From the experiment results, the designed switch has good performance of the return loss, insertion loss and isolation in W-band. Compared with some previously reported works, the designed switch has the best isolation performance of 48 dB at 94-GHz, and IP1dB is > 9dBm, respectively.

Original languageEnglish
Pages (from-to)2725-2731
Number of pages7
JournalMicrowave and Optical Technology Letters
Volume58
Issue number11
DOIs
Publication statusPublished - 2016 Nov 1

Fingerprint

transmitter receivers
Transceivers
Millimeter waves
cancellation
millimeter waves
CMOS
leakage
switches
Switches
isolation
Insertion losses
insertion loss
shunts
inductors
floating
Poles
Transistors
transistors
poles
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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Design of a 75–110-GHz millimeter-wave 90-nm CMOS highly isolated transmitter/receiver switch by leakage-cancellation technique. / Chou, Chien Chang; Huang, Shih Chiao; Lai, Wen Chian; Kuo, H. C.; Chuang, Huey Ru.

In: Microwave and Optical Technology Letters, Vol. 58, No. 11, 01.11.2016, p. 2725-2731.

Research output: Contribution to journalArticle

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