TY - GEN
T1 - Design of a-Si:H gate driver circuit with fast charging and discharging capability for high-resolution liquid-crystal displays
AU - Lee, Po Ting
AU - Lee, Ching En
AU - Wang, Ming Xun
AU - Lin, Chih Lung
N1 - Funding Information:
The work was supported by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education and the Ministry of Science and Technology (MOST 104-2221-E-006-189-MY3) ofTaiwan, as well as AU Optronics Corporation is appreciated for its technical and funding support.
Publisher Copyright:
© 2017 Proceedings of the International Display Workshops. All rights reserved.
PY - 2017
Y1 - 2017
N2 - This work proposes a gate driver circuit using a-Si:H technology for high-resolution TFT-LCDs. According to the simulation results, the gate-node voltage of the driving TFT can be raised to 40.6 V when discharging the output node to shorten the falling time of the output waveform to 1.38 μs.
AB - This work proposes a gate driver circuit using a-Si:H technology for high-resolution TFT-LCDs. According to the simulation results, the gate-node voltage of the driving TFT can be raised to 40.6 V when discharging the output node to shorten the falling time of the output waveform to 1.38 μs.
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M3 - Conference contribution
AN - SCOPUS:85056155203
T3 - Proceedings of the International Display Workshops
SP - 1465
EP - 1468
BT - 24th International Display Workshops, IDW 2017
PB - International Display Workshops
T2 - 24th International Display Workshops, IDW 2017
Y2 - 6 December 2017 through 8 December 2017
ER -