Design of AlGaInP visible lasers with a low vertical divergence angle

W. L. Li; Y. K. Su; S. J. Chang; C. S. Chang; C. Y. Tsai

doi:10.1016/S0038-1101(97)00212-8

Design of AlGaInP visible lasers with a low vertical divergence angle

W. L. Li
, Y. K. Su
, S. J. Chang
, C. S. Chang
, C. Y. Tsai

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

AlGaInP visible lasers with depressed index cladding layers are studied theoretically and experimentally. Using the above low-refractive-index layer, we can significantly improve the characteristics of the transverse beam divergence. According to our experimental results, the transverse beam divergence can be reduced from 41.4° to 26.2°. These values also agree well with our theoretical calculations. In addition, we have optimized this structure theoretically. With a proper choice of structure parameters, we can design an AlGaInP laser diode with a transverse divergence angle as narrow as 8° while maintaining a low threshold current density.

Original language	English
Pages (from-to)	87-90
Number of pages	4
Journal	Solid-State Electronics
Volume	42
Issue number	1
DOIs	https://doi.org/10.1016/S0038-1101(97)00212-8
Publication status	Published - 1998 Jan 30

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(97)00212-8

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title = "Design of AlGaInP visible lasers with a low vertical divergence angle",

abstract = "AlGaInP visible lasers with depressed index cladding layers are studied theoretically and experimentally. Using the above low-refractive-index layer, we can significantly improve the characteristics of the transverse beam divergence. According to our experimental results, the transverse beam divergence can be reduced from 41.4° to 26.2°. These values also agree well with our theoretical calculations. In addition, we have optimized this structure theoretically. With a proper choice of structure parameters, we can design an AlGaInP laser diode with a transverse divergence angle as narrow as 8° while maintaining a low threshold current density.",

author = "Li, \{W. L.\} and Su, \{Y. K.\} and Chang, \{S. J.\} and Chang, \{C. S.\} and Tsai, \{C. Y.\}",

note = "Funding Information: This work was supported by the National Science Council, R.O.C., under Contract No. NSC-85-2215-E-006-004 and No. NSC-85-2622-E-006-005.",

year = "1998",

month = jan,

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doi = "10.1016/S0038-1101(97)00212-8",

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journal = "Solid-State Electronics",

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TY - JOUR

T1 - Design of AlGaInP visible lasers with a low vertical divergence angle

AU - Li, W. L.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Chang, C. S.

AU - Tsai, C. Y.

N1 - Funding Information: This work was supported by the National Science Council, R.O.C., under Contract No. NSC-85-2215-E-006-004 and No. NSC-85-2622-E-006-005.

PY - 1998/1/30

Y1 - 1998/1/30

N2 - AlGaInP visible lasers with depressed index cladding layers are studied theoretically and experimentally. Using the above low-refractive-index layer, we can significantly improve the characteristics of the transverse beam divergence. According to our experimental results, the transverse beam divergence can be reduced from 41.4° to 26.2°. These values also agree well with our theoretical calculations. In addition, we have optimized this structure theoretically. With a proper choice of structure parameters, we can design an AlGaInP laser diode with a transverse divergence angle as narrow as 8° while maintaining a low threshold current density.

AB - AlGaInP visible lasers with depressed index cladding layers are studied theoretically and experimentally. Using the above low-refractive-index layer, we can significantly improve the characteristics of the transverse beam divergence. According to our experimental results, the transverse beam divergence can be reduced from 41.4° to 26.2°. These values also agree well with our theoretical calculations. In addition, we have optimized this structure theoretically. With a proper choice of structure parameters, we can design an AlGaInP laser diode with a transverse divergence angle as narrow as 8° while maintaining a low threshold current density.

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DO - 10.1016/S0038-1101(97)00212-8

M3 - Article

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EP - 90

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -

Design of AlGaInP visible lasers with a low vertical divergence angle

Abstract

All Science Journal Classification (ASJC) codes

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