Design of an RF power amplifier module for 900 MHz ISM-band wireless portable phones

Cheng Yung Chiang, Huey-Ru Chuang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The design of an RF power amplifier (PA) module for ISM-band (902-928 MHz) wireless portable phones is presented. The 3-stage PA module uses a bipolar transistor and two GaAs FETs power transistors. In order for it to be used in the digital radio or spread spectrum communication systems, besides meeting the output power and efficiency requirements, a high linearity is also desired. For power amplifier designs, a simple and effective load-pull measurement setup and procedure are developed to measure power transistors under large signal conditions. The realized PA module has an 1.4 W maximum output power, 33 dB gain, 47.75 dBm 3rd-order intercept point (OIP3), and 45% power-added efficiency (PAE).

Original languageEnglish
Pages (from-to)307-314
Number of pages8
JournalJournal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an
Volume2
Issue number4
Publication statusPublished - 1995 Nov

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Power amplifiers
Spread spectrum communication
Digital radio
Bipolar transistors
Field effect transistors
Communication systems
Power transistors

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

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