Abstract
The design of an RF power amplifier (PA) module for ISM-band (902-928 MHz) wireless portable phones is presented. The 3-stage PA module uses a bipolar transistor and two GaAs FETs power transistors. In order for it to be used in the digital radio or spread spectrum communication systems, besides meeting the output power and efficiency requirements, a high linearity is also desired. For power amplifier designs, a simple and effective load-pull measurement setup and procedure are developed to measure power transistors under large signal conditions. The realized PA module has an 1.4 W maximum output power, 33 dB gain, 47.75 dBm 3rd-order intercept point (OIP3), and 45% power-added efficiency (PAE).
| Original language | English |
|---|---|
| Pages (from-to) | 307-314 |
| Number of pages | 8 |
| Journal | Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an |
| Volume | 2 |
| Issue number | 4 |
| Publication status | Published - 1995 Nov |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering