Design of FinFET SRAM cells using a statistical compact model

Darsen Lu, Chung Hsun Lin, Shijing Yao, Weize Xiong, Florian Bauer, Cloves R. Cleavelin, Ali M. Niknejad, Chenming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

A study of designing FinFET-based SRAM cells using a compact model is reported. Parameters for a multi-gate FET compact model, BSIM-MG are extracted from fabricated n-type and p-type SOI FinFETs. Local mismatch in gate length and fin width is calibrated to electrical measurements of 378 FinFET SRAM cells. The cell design is re-optimized through Monte Carlo statistical simulations. Variation in readability, writability and static leakage of the cell are studied.

Original languageEnglish
Title of host publicationSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
DOIs
Publication statusPublished - 2009 Dec 1
EventSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices - San Diego, CA, United States
Duration: 2009 Sep 92009 Sep 11

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Other

OtherSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
Country/TerritoryUnited States
CitySan Diego, CA
Period09-09-0909-09-11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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