Design of gate-all-around silicon mosfets for 6-T Sram area efficiency and yield

Yi Bo Liao, Meng Hsueh Chiang, Nattapol Damrongplasit, Wei Chou Hsu, Tsu Jae King Liu

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


Gate-all-around (GAA) MOSFETs relevant for the 11.9-nm CMOS technology node are optimized with device dimensions following the scale length rule. Variability in transistor performance due to systematic and random variations is estimated with the aid of TCAD 3-D device simulations, for these well-tempered GAA structures. The tradeoff between read stability and write-ability of 6-T static RAM cell designs implemented with GAA MOSFETs with either square or rectangular nanowire channel regions is then investigated, and a calibrated transistor I-V compact model is used to estimate cell yield. The results indicate that a rectangular (thin and wide) channel design achieves the optimal balance between the read yield and write yield and hence provides for the lowest minimum cell operating voltage, estimated to be ~0.45 V, as well as smaller cell area.

Original languageEnglish
Article number6823112
Pages (from-to)2371-2377
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number7
Publication statusPublished - 2014 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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