Design of Gate Driver Circuit Using a-Si:H Thin-Film Transistors with Bootstrapping Structure for High-Resolution Displays

Bo Shu Chen, Ming Yang Deng, Wei Sheng Liao, Chih-Lung Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work proposes a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver circuit with a bootstrapping structure to shorten the falling time of output waveforms. The driving capability of the proposed circuit is improved without increasing the aspect ratio of driving TFT owing to the enlarged gate voltages by bootstrapping structure. The falling time of output waveforms is reduced by 20% compared to that of conventional gate driver circuit.

Original languageEnglish
Title of host publicationAM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9784990875350
DOIs
Publication statusPublished - 2018 Aug 15
Event25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018 - Kyoto, Japan
Duration: 2018 Jul 32018 Jul 6

Publication series

NameAM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Other

Other25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018
CountryJapan
CityKyoto
Period18-07-0318-07-06

Fingerprint

Thin film transistors
transistors
Display devices
falling
Networks (circuits)
high resolution
waveforms
thin films
output
Amorphous silicon
amorphous silicon
aspect ratio
Aspect ratio
Electric potential
electric potential

All Science Journal Classification (ASJC) codes

  • Media Technology
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Cite this

Chen, B. S., Deng, M. Y., Liao, W. S., & Lin, C-L. (2018). Design of Gate Driver Circuit Using a-Si:H Thin-Film Transistors with Bootstrapping Structure for High-Resolution Displays. In AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings [8437368] (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/AM-FPD.2018.8437368
Chen, Bo Shu ; Deng, Ming Yang ; Liao, Wei Sheng ; Lin, Chih-Lung. / Design of Gate Driver Circuit Using a-Si:H Thin-Film Transistors with Bootstrapping Structure for High-Resolution Displays. AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).
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title = "Design of Gate Driver Circuit Using a-Si:H Thin-Film Transistors with Bootstrapping Structure for High-Resolution Displays",
abstract = "This work proposes a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver circuit with a bootstrapping structure to shorten the falling time of output waveforms. The driving capability of the proposed circuit is improved without increasing the aspect ratio of driving TFT owing to the enlarged gate voltages by bootstrapping structure. The falling time of output waveforms is reduced by 20{\%} compared to that of conventional gate driver circuit.",
author = "Chen, {Bo Shu} and Deng, {Ming Yang} and Liao, {Wei Sheng} and Chih-Lung Lin",
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series = "AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings",
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Chen, BS, Deng, MY, Liao, WS & Lin, C-L 2018, Design of Gate Driver Circuit Using a-Si:H Thin-Film Transistors with Bootstrapping Structure for High-Resolution Displays. in AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings., 8437368, AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, Institute of Electrical and Electronics Engineers Inc., 25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018, Kyoto, Japan, 18-07-03. https://doi.org/10.23919/AM-FPD.2018.8437368

Design of Gate Driver Circuit Using a-Si:H Thin-Film Transistors with Bootstrapping Structure for High-Resolution Displays. / Chen, Bo Shu; Deng, Ming Yang; Liao, Wei Sheng; Lin, Chih-Lung.

AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. 8437368 (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - This work proposes a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver circuit with a bootstrapping structure to shorten the falling time of output waveforms. The driving capability of the proposed circuit is improved without increasing the aspect ratio of driving TFT owing to the enlarged gate voltages by bootstrapping structure. The falling time of output waveforms is reduced by 20% compared to that of conventional gate driver circuit.

AB - This work proposes a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver circuit with a bootstrapping structure to shorten the falling time of output waveforms. The driving capability of the proposed circuit is improved without increasing the aspect ratio of driving TFT owing to the enlarged gate voltages by bootstrapping structure. The falling time of output waveforms is reduced by 20% compared to that of conventional gate driver circuit.

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Chen BS, Deng MY, Liao WS, Lin C-L. Design of Gate Driver Circuit Using a-Si:H Thin-Film Transistors with Bootstrapping Structure for High-Resolution Displays. In AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. 8437368. (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). https://doi.org/10.23919/AM-FPD.2018.8437368