Design of Hole-Blocking and Electron-Blocking Layers in AlxGa1-xN-Based UV Light-Emitting Diodes

Ya Hsuan Shih; Jih Yuan Chang; Jinn Kong Sheu; Yen Kuang Kuo; Fang Ming Chen; Ming Lun Lee; Wei Chih Lai

doi:10.1109/TED.2016.2520998

Design of Hole-Blocking and Electron-Blocking Layers in Al_xGa_1-xN-Based UV Light-Emitting Diodes

Ya Hsuan Shih, Jih Yuan Chang, Jinn Kong Sheu, Yen Kuang Kuo, Fang Ming Chen, Ming Lun Lee, Wei Chih Lai

Department of Photonics

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

The band-engineered structure design for electron-blocking layer (EBL) and hole-blocking layer (HBL) in Al_xGa_1-xN-based ultraviolet light-emitting diodes (UV LEDs) is performed and analyzed theoretically. Simulation results show that the severe polarization effect is efficiently mitigated and the downward-bended band profile of the EBL is improved when the EBL is designed with a graded-composition and multiquantum barrier (GMQB) structure. As a result, the capabilities of both electron confinement and hole injection, and also the light output power are promoted. On the contrary, for the HBL, the design of composition graded and/or multiquantum barrier structures reduces the effective potential barrier height for holes in the valence band and, consequently, causes a considerable hole overflow. The UV LED, thus, exhibits superior optical performance when the LED structure is simultaneously designed with a GMQB EBL and a bulk HBL.

Original language	English
Article number	7399737
Pages (from-to)	1141-1147
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	3
DOIs	https://doi.org/10.1109/TED.2016.2520998
Publication status	Published - 2016 Mar

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2016.2520998

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title = "Design of Hole-Blocking and Electron-Blocking Layers in AlxGa1-xN-Based UV Light-Emitting Diodes",

abstract = "The band-engineered structure design for electron-blocking layer (EBL) and hole-blocking layer (HBL) in AlxGa1-xN-based ultraviolet light-emitting diodes (UV LEDs) is performed and analyzed theoretically. Simulation results show that the severe polarization effect is efficiently mitigated and the downward-bended band profile of the EBL is improved when the EBL is designed with a graded-composition and multiquantum barrier (GMQB) structure. As a result, the capabilities of both electron confinement and hole injection, and also the light output power are promoted. On the contrary, for the HBL, the design of composition graded and/or multiquantum barrier structures reduces the effective potential barrier height for holes in the valence band and, consequently, causes a considerable hole overflow. The UV LED, thus, exhibits superior optical performance when the LED structure is simultaneously designed with a GMQB EBL and a bulk HBL.",

author = "Shih, {Ya Hsuan} and Chang, {Jih Yuan} and Sheu, {Jinn Kong} and Kuo, {Yen Kuang} and Chen, {Fang Ming} and Lee, {Ming Lun} and Lai, {Wei Chih}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

month = mar,

doi = "10.1109/TED.2016.2520998",

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AU - Shih, Ya Hsuan

AU - Chang, Jih Yuan

AU - Sheu, Jinn Kong

AU - Kuo, Yen Kuang

AU - Chen, Fang Ming

AU - Lee, Ming Lun

AU - Lai, Wei Chih

PY - 2016/3

Y1 - 2016/3

N2 - The band-engineered structure design for electron-blocking layer (EBL) and hole-blocking layer (HBL) in AlxGa1-xN-based ultraviolet light-emitting diodes (UV LEDs) is performed and analyzed theoretically. Simulation results show that the severe polarization effect is efficiently mitigated and the downward-bended band profile of the EBL is improved when the EBL is designed with a graded-composition and multiquantum barrier (GMQB) structure. As a result, the capabilities of both electron confinement and hole injection, and also the light output power are promoted. On the contrary, for the HBL, the design of composition graded and/or multiquantum barrier structures reduces the effective potential barrier height for holes in the valence band and, consequently, causes a considerable hole overflow. The UV LED, thus, exhibits superior optical performance when the LED structure is simultaneously designed with a GMQB EBL and a bulk HBL.

AB - The band-engineered structure design for electron-blocking layer (EBL) and hole-blocking layer (HBL) in AlxGa1-xN-based ultraviolet light-emitting diodes (UV LEDs) is performed and analyzed theoretically. Simulation results show that the severe polarization effect is efficiently mitigated and the downward-bended band profile of the EBL is improved when the EBL is designed with a graded-composition and multiquantum barrier (GMQB) structure. As a result, the capabilities of both electron confinement and hole injection, and also the light output power are promoted. On the contrary, for the HBL, the design of composition graded and/or multiquantum barrier structures reduces the effective potential barrier height for holes in the valence band and, consequently, causes a considerable hole overflow. The UV LED, thus, exhibits superior optical performance when the LED structure is simultaneously designed with a GMQB EBL and a bulk HBL.

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Design of Hole-Blocking and Electron-Blocking Layers in Al_xGa_1-xN-Based UV Light-Emitting Diodes

Abstract

All Science Journal Classification (ASJC) codes

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