Design of multiple-quantum-well electroabsorption surface-normal modulators using asymmetric Fabry-Perot structures

R. S. Pan, M. P. Houng, Y. H. Wang

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

We presented a systematic approach for optimizing the performance of a multiple-quantum-well eleectroabsorption surface-normal modulator using asymmetric Fabry-Perot structures. The primary requirements of these modulators are low drive voltage,high contrast ratio(CR), low insertion loss, and high speed.For specified high CR (> 20dB) requirement, maximizing Δαmax/ΔF of the material structure,where Δαmax is the maximum absorption change and ΔF is the corresponding applied electric field, or adopting RT ~ 60% of asymmetric Fabry-Perot etalon can obtain low-drivevoltage modulator. There are trade-off between the requirements of low-drive-voltage and highfrequency-response.The criterion of the optimization is to maximum Δα/ΔF2.Our theoretical model shows that wider wells give large Δαmax/ΔF2 for ASFP modulators.

Original languageEnglish
DOIs
Publication statusPublished - 1994 Jan 1
Event1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan
Duration: 1994 Jul 121994 Jul 15

Conference

Conference1994 International Electron Devices and Materials Symposium, EDMS 1994
Country/TerritoryTaiwan
CityHsinchu
Period94-07-1294-07-15

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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