Design of multiple-quantum-well electroabsorption surface-normal modulators using asymmetric Fabry-Perot structures

R. S. Pan; M. P. Houng; Y. H. Wang

doi:10.1109/EDMS.1994.771295

Design of multiple-quantum-well electroabsorption surface-normal modulators using asymmetric Fabry-Perot structures

R. S. Pan, M. P. Houng, Y. H. Wang

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

We presented a systematic approach for optimizing the performance of a multiple-quantum-well eleectroabsorption surface-normal modulator using asymmetric Fabry-Perot structures. The primary requirements of these modulators are low drive voltage,high contrast ratio(CR), low insertion loss, and high speed.For specified high CR (> 20dB) requirement, maximizing Δα_max/ΔF of the material structure,where Δα_max is the maximum absorption change and ΔF is the corresponding applied electric field, or adopting R_T ~ 60% of asymmetric Fabry-Perot etalon can obtain low-drivevoltage modulator. There are trade-off between the requirements of low-drive-voltage and highfrequency-response.The criterion of the optimization is to maximum Δα/ΔF².Our theoretical model shows that wider wells give large Δα_max/ΔF² for ASFP modulators.

Original language	English
DOIs	https://doi.org/10.1109/EDMS.1994.771295
Publication status	Published - 1994
Event	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan Duration: 1994 Jul 12 → 1994 Jul 15

Conference

Conference	1994 International Electron Devices and Materials Symposium, EDMS 1994
Country/Territory	Taiwan
City	Hsinchu
Period	94-07-12 → 94-07-15

All Science Journal Classification (ASJC) codes

Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/EDMS.1994.771295

Cite this

@conference{ecdcbbb310d44b7ead097829da357fae,

title = "Design of multiple-quantum-well electroabsorption surface-normal modulators using asymmetric Fabry-Perot structures",

abstract = "We presented a systematic approach for optimizing the performance of a multiple-quantum-well eleectroabsorption surface-normal modulator using asymmetric Fabry-Perot structures. The primary requirements of these modulators are low drive voltage,high contrast ratio(CR), low insertion loss, and high speed.For specified high CR (> 20dB) requirement, maximizing Δαmax/ΔF of the material structure,where Δαmax is the maximum absorption change and ΔF is the corresponding applied electric field, or adopting RT ~ 60% of asymmetric Fabry-Perot etalon can obtain low-drivevoltage modulator. There are trade-off between the requirements of low-drive-voltage and highfrequency-response.The criterion of the optimization is to maximum Δα/ΔF2.Our theoretical model shows that wider wells give large Δαmax/ΔF2 for ASFP modulators.",

author = "Pan, {R. S.} and Houng, {M. P.} and Wang, {Y. H.}",

note = "Publisher Copyright: {\textcopyright} 1994 IEEE.; 1994 International Electron Devices and Materials Symposium, EDMS 1994 ; Conference date: 12-07-1994 Through 15-07-1994",

year = "1994",

doi = "10.1109/EDMS.1994.771295",

language = "English",

}

TY - CONF

T1 - Design of multiple-quantum-well electroabsorption surface-normal modulators using asymmetric Fabry-Perot structures

AU - Pan, R. S.

AU - Houng, M. P.

AU - Wang, Y. H.

PY - 1994

Y1 - 1994

N2 - We presented a systematic approach for optimizing the performance of a multiple-quantum-well eleectroabsorption surface-normal modulator using asymmetric Fabry-Perot structures. The primary requirements of these modulators are low drive voltage,high contrast ratio(CR), low insertion loss, and high speed.For specified high CR (> 20dB) requirement, maximizing Δαmax/ΔF of the material structure,where Δαmax is the maximum absorption change and ΔF is the corresponding applied electric field, or adopting RT ~ 60% of asymmetric Fabry-Perot etalon can obtain low-drivevoltage modulator. There are trade-off between the requirements of low-drive-voltage and highfrequency-response.The criterion of the optimization is to maximum Δα/ΔF2.Our theoretical model shows that wider wells give large Δαmax/ΔF2 for ASFP modulators.

AB - We presented a systematic approach for optimizing the performance of a multiple-quantum-well eleectroabsorption surface-normal modulator using asymmetric Fabry-Perot structures. The primary requirements of these modulators are low drive voltage,high contrast ratio(CR), low insertion loss, and high speed.For specified high CR (> 20dB) requirement, maximizing Δαmax/ΔF of the material structure,where Δαmax is the maximum absorption change and ΔF is the corresponding applied electric field, or adopting RT ~ 60% of asymmetric Fabry-Perot etalon can obtain low-drivevoltage modulator. There are trade-off between the requirements of low-drive-voltage and highfrequency-response.The criterion of the optimization is to maximum Δα/ΔF2.Our theoretical model shows that wider wells give large Δαmax/ΔF2 for ASFP modulators.

UR - http://www.scopus.com/inward/record.url?scp=77957343035&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957343035&partnerID=8YFLogxK

U2 - 10.1109/EDMS.1994.771295

DO - 10.1109/EDMS.1994.771295

M3 - Paper

AN - SCOPUS:77957343035

T2 - 1994 International Electron Devices and Materials Symposium, EDMS 1994

Y2 - 12 July 1994 through 15 July 1994

ER -

Design of multiple-quantum-well electroabsorption surface-normal modulators using asymmetric Fabry-Perot structures

Abstract

Conference

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this