This work proposes a new gate driver circuit with a multiple‐bootstrap structure to improve the poor field‐effect mobility of thin‐film transistors (TFTs). The proposed circuit can shorten the falling time of output waveform without increasing the aspect ratio of driving TFT. The falling time of output waveform is improved by 24% compared to that of conventional gate driver circuit.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2018 Jan 1|
|Event||SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States|
Duration: 2018 May 20 → 2018 May 25
All Science Journal Classification (ASJC) codes