Design of quantum well thermoelectric energy harvester by CMOS process

Shih-Ming Yang; G. J. Sheu

doi:10.1109/NANO.2013.6720796

Design of quantum well thermoelectric energy harvester by CMOS process

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This work aims at improving the energy harvester performance by using low-dimensional thermoelectric materials. A micro-thermoelectric generator with quantum well thermocouples is developed by state-of-the-art CMOS (Complementary metal-oxide semiconductor) process. A relaxation-time model is applied to analyze the characteristic length of silicon germanium quantum well, and a thermal model is also applied to calculate the thermocouple size for optimal performance by matching the thermal/electrical resistance. Analysis based on TSMC 0.35μm 3P3M (3-poly and 3-metal layers) BiCMOS process shows that the quantum well thermocouples (0.05 μm Si_0.9Ge_0.1 quantum well on 0.300 μm P-thermoleg and 0.280 μm N-thermoleg) has the best performance. that the power factor and voltage factor is 0.241 μW/cm ²K² and 10.442 V/cm²K.

Original language	English
Title of host publication	2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Pages	496-500
Number of pages	5
DOIs	https://doi.org/10.1109/NANO.2013.6720796
Publication status	Published - 2013 Dec 1
Event	2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China Duration: 2013 Aug 5 → 2013 Aug 8

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Other

Other	2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Country/Territory	China
City	Beijing
Period	13-08-05 → 13-08-08

All Science Journal Classification (ASJC) codes

Bioengineering
Electrical and Electronic Engineering
Materials Chemistry
Condensed Matter Physics

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10.1109/NANO.2013.6720796

Cite this

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title = "Design of quantum well thermoelectric energy harvester by CMOS process",

abstract = "This work aims at improving the energy harvester performance by using low-dimensional thermoelectric materials. A micro-thermoelectric generator with quantum well thermocouples is developed by state-of-the-art CMOS (Complementary metal-oxide semiconductor) process. A relaxation-time model is applied to analyze the characteristic length of silicon germanium quantum well, and a thermal model is also applied to calculate the thermocouple size for optimal performance by matching the thermal/electrical resistance. Analysis based on TSMC 0.35μm 3P3M (3-poly and 3-metal layers) BiCMOS process shows that the quantum well thermocouples (0.05 μm Si0.9Ge0.1 quantum well on 0.300 μm P-thermoleg and 0.280 μm N-thermoleg) has the best performance. that the power factor and voltage factor is 0.241 μW/cm 2K2 and 10.442 V/cm2K.",

author = "Shih-Ming Yang and Sheu, {G. J.}",

year = "2013",

month = dec,

day = "1",

doi = "10.1109/NANO.2013.6720796",

language = "English",

isbn = "9781479906758",

series = "Proceedings of the IEEE Conference on Nanotechnology",

pages = "496--500",

booktitle = "2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013",

note = "2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 ; Conference date: 05-08-2013 Through 08-08-2013",

}

Yang, S-M & Sheu, GJ 2013, Design of quantum well thermoelectric energy harvester by CMOS process. in 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013., 6720796, Proceedings of the IEEE Conference on Nanotechnology, pp. 496-500, 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013, Beijing, China, 13-08-05. https://doi.org/10.1109/NANO.2013.6720796

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AU - Sheu, G. J.

PY - 2013/12/1

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N2 - This work aims at improving the energy harvester performance by using low-dimensional thermoelectric materials. A micro-thermoelectric generator with quantum well thermocouples is developed by state-of-the-art CMOS (Complementary metal-oxide semiconductor) process. A relaxation-time model is applied to analyze the characteristic length of silicon germanium quantum well, and a thermal model is also applied to calculate the thermocouple size for optimal performance by matching the thermal/electrical resistance. Analysis based on TSMC 0.35μm 3P3M (3-poly and 3-metal layers) BiCMOS process shows that the quantum well thermocouples (0.05 μm Si0.9Ge0.1 quantum well on 0.300 μm P-thermoleg and 0.280 μm N-thermoleg) has the best performance. that the power factor and voltage factor is 0.241 μW/cm 2K2 and 10.442 V/cm2K.

AB - This work aims at improving the energy harvester performance by using low-dimensional thermoelectric materials. A micro-thermoelectric generator with quantum well thermocouples is developed by state-of-the-art CMOS (Complementary metal-oxide semiconductor) process. A relaxation-time model is applied to analyze the characteristic length of silicon germanium quantum well, and a thermal model is also applied to calculate the thermocouple size for optimal performance by matching the thermal/electrical resistance. Analysis based on TSMC 0.35μm 3P3M (3-poly and 3-metal layers) BiCMOS process shows that the quantum well thermocouples (0.05 μm Si0.9Ge0.1 quantum well on 0.300 μm P-thermoleg and 0.280 μm N-thermoleg) has the best performance. that the power factor and voltage factor is 0.241 μW/cm 2K2 and 10.442 V/cm2K.

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Design of quantum well thermoelectric energy harvester by CMOS process

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