Abstract
This article presents a V-band down-converting cascode mixer fabricated in the 0.13-μm CMOS process. The mixer utilizes the cascode topology and adds a buffer to avoid loading effects. The V-band mixer exhibits a conversion gain of -1.7 dB, an input 1-dB compression point of -8 dBm at RF of 60 GHz, IF of 5 GHz, and LO power of 0 dBm. The RF-IF isolation is more than 26 dB. The LO-RF isolation is more than 15 dB. In addition to the good agreement between simulation and measurement, the proposed cascode CMOS mixer with a small chip size has a complete measured performance for further 60-GHz receiver RF front-end integration.
| Original language | English |
|---|---|
| Pages (from-to) | 1973-1977 |
| Number of pages | 5 |
| Journal | Microwave and Optical Technology Letters |
| Volume | 52 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2010 Sept |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
Fingerprint
Dive into the research topics of 'Design of V-band CMOS down-converting cascode mixer'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver