A V-Band millimeter-wave CMOS low noise amplifier (LNA) fabricated with the 0.13 μm process is presented. A three-stage cascaded common source structure is adopted. The measurement residts of the fabricated LNA show the peak performance at 50 GHz exhibiting a gain of 11.7 dB and a noise figure of 7.9 dB. The input P 1dB and IIP3 are -9.5 and -1.65 dBm, respectively. The total power consumption is 21.6 mWfrom a 1.2 V power supply.
|Number of pages||9|
|Specialist publication||Microwave Journal|
|Publication status||Published - 2011 Oct 1|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering