Design of V-band millimeter-wave CMOS low noise amplifier

Hsin Chih Kuo, Chu Yun Yang, Huey-Ru Chuang

Research output: Contribution to specialist publicationArticle

Abstract

A V-Band millimeter-wave CMOS low noise amplifier (LNA) fabricated with the 0.13 μm process is presented. A three-stage cascaded common source structure is adopted. The measurement residts of the fabricated LNA show the peak performance at 50 GHz exhibiting a gain of 11.7 dB and a noise figure of 7.9 dB. The input P 1dB and IIP3 are -9.5 and -1.65 dBm, respectively. The total power consumption is 21.6 mWfrom a 1.2 V power supply.

Original languageEnglish
Pages118-126
Number of pages9
Volume54
No.10
Specialist publicationMicrowave Journal
Publication statusPublished - 2011 Oct

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Low noise amplifiers
Millimeter waves
Noise figure
Electric power utilization

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Kuo, Hsin Chih ; Yang, Chu Yun ; Chuang, Huey-Ru. / Design of V-band millimeter-wave CMOS low noise amplifier. In: Microwave Journal. 2011 ; Vol. 54, No. 10. pp. 118-126.
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Design of V-band millimeter-wave CMOS low noise amplifier. / Kuo, Hsin Chih; Yang, Chu Yun; Chuang, Huey-Ru.

In: Microwave Journal, Vol. 54, No. 10, 10.2011, p. 118-126.

Research output: Contribution to specialist publicationArticle

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