Design of W-band high-isolation T/R switch

Chien Chang Chou, Shih Chiao Huang, Wen Chian Lai, H. C. Kuo, Huey-Ru Chuang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

This paper presents a W-band CMOS SPDT high isolation T/R switch fabricated in 90nm CMOS. The switch is designed by using series-shunt structure with body-floating technique to improve the insertion loss and linearity. To achieve high-isolation performance, the parallel inductor and leakage cancellation technique are adopted. The measurement results show that the designed switch has a good performance in the return loss, insertion loss and isolation in W-band 75-110GHz frequency band. Compared with reported works, the designed switch has the best isolation performance of 48 dB at 94-GHz.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2015
Subtitle of host publication"Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1084-1087
Number of pages4
ISBN (Electronic)9782874870392
DOIs
Publication statusPublished - 2015 Dec 2
Event45th European Microwave Conference, EuMC 2015 - Paris, France
Duration: 2015 Sep 72015 Sep 10

Publication series

NameEuropean Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC

Other

Other45th European Microwave Conference, EuMC 2015
CountryFrance
CityParis
Period15-09-0715-09-10

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Radiation

Fingerprint Dive into the research topics of 'Design of W-band high-isolation T/R switch'. Together they form a unique fingerprint.

Cite this