Abstract
Bandgap voltage is typically used as the reference voltage of voltage regulators, such as dc-dc converters. Two high-precision CMOS bandgap reference circuits, labeled as current-mode and voltage-mode bandgap circuits, are proposed. The voltage-mode bandgap circuit can work with the supply voltage ranging from 2.5 V to 5V, while the current-mode bandgap works from 1.8 V to 5V. Both of them were designed and fabricated by using the TSMC 0.35-μm CMOS 3.3V/5V mixed-signal 2P4M polycide process. The measured temperature coefficient of the voltage-mode bandgap is 8.6 ppm/°C when supplied by a 5-V voltage. The measured line regulation of the voltage-mode bandgap is 0.16%/V, while that of the current-mode one is 0.13%/V.
Original language | English |
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Title of host publication | 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 1867-1871 |
Number of pages | 5 |
ISBN (Electronic) | 9781509051571 |
DOIs | |
Publication status | Published - 2017 Jul 25 |
Event | 3rd IEEE International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017 - Kaohsiung, Taiwan Duration: 2017 Jun 3 → 2017 Jun 7 |
Other
Other | 3rd IEEE International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017 |
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Country/Territory | Taiwan |
City | Kaohsiung |
Period | 17-06-03 → 17-06-07 |
All Science Journal Classification (ASJC) codes
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering
- Control and Optimization