Optically detected magnetic resonance has been employed for the first time on photoluminescence from a Si/Si1-xGex strained-layer superlattice. Emission bands occur at 0.87 and 0.8 eV. One of the resonances is anisotropic with g?=4.460.05 and g<0.4 and is assigned to holes of the Jz=3/2 valence band in the SiGe layers. This result demonstrates that at least part of the emission must originate from the superlattice region of these structures.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)