Detection of magnetic resonance on photoluminescence from a Si/Si1-xGex strained-layer superlattice

E. Glaser; J. M. Trombetta; T. A. Kennedy; S. M. Prokes; O. J. Glembocki; K. L. Wang; C. H. Chern

doi:10.1103/PhysRevLett.65.1247

Detection of magnetic resonance on photoluminescence from a Si/Si1-xGex strained-layer superlattice

E. Glaser, J. M. Trombetta, T. A. Kennedy, S. M. Prokes, O. J. Glembocki, K. L. Wang, C. H. Chern

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

Optically detected magnetic resonance has been employed for the first time on photoluminescence from a Si/Si1-xGex strained-layer superlattice. Emission bands occur at 0.87 and 0.8 eV. One of the resonances is anisotropic with g?=4.460.05 and g<0.4 and is assigned to holes of the Jz=3/2 valence band in the SiGe layers. This result demonstrates that at least part of the emission must originate from the superlattice region of these structures.

Original language	English
Pages (from-to)	1247-1250
Number of pages	4
Journal	Physical review letters
Volume	65
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevLett.65.1247
Publication status	Published - 1990

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.65.1247

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title = "Detection of magnetic resonance on photoluminescence from a Si/Si1-xGex strained-layer superlattice",

abstract = "Optically detected magnetic resonance has been employed for the first time on photoluminescence from a Si/Si1-xGex strained-layer superlattice. Emission bands occur at 0.87 and 0.8 eV. One of the resonances is anisotropic with g?=4.460.05 and g<0.4 and is assigned to holes of the Jz=3/2 valence band in the SiGe layers. This result demonstrates that at least part of the emission must originate from the superlattice region of these structures.",

author = "E. Glaser and Trombetta, {J. M.} and Kennedy, {T. A.} and Prokes, {S. M.} and Glembocki, {O. J.} and Wang, {K. L.} and Chern, {C. H.}",

year = "1990",

doi = "10.1103/PhysRevLett.65.1247",

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T1 - Detection of magnetic resonance on photoluminescence from a Si/Si1-xGex strained-layer superlattice

AU - Glaser, E.

AU - Trombetta, J. M.

AU - Kennedy, T. A.

AU - Prokes, S. M.

AU - Glembocki, O. J.

AU - Wang, K. L.

AU - Chern, C. H.

PY - 1990

Y1 - 1990

N2 - Optically detected magnetic resonance has been employed for the first time on photoluminescence from a Si/Si1-xGex strained-layer superlattice. Emission bands occur at 0.87 and 0.8 eV. One of the resonances is anisotropic with g?=4.460.05 and g<0.4 and is assigned to holes of the Jz=3/2 valence band in the SiGe layers. This result demonstrates that at least part of the emission must originate from the superlattice region of these structures.

AB - Optically detected magnetic resonance has been employed for the first time on photoluminescence from a Si/Si1-xGex strained-layer superlattice. Emission bands occur at 0.87 and 0.8 eV. One of the resonances is anisotropic with g?=4.460.05 and g<0.4 and is assigned to holes of the Jz=3/2 valence band in the SiGe layers. This result demonstrates that at least part of the emission must originate from the superlattice region of these structures.

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Detection of magnetic resonance on photoluminescence from a Si/Si1-xGex strained-layer superlattice

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