Detection of magnetic resonance on photoluminescence from a Si/Si1-xGex strained-layer superlattice

E. Glaser, J. M. Trombetta, T. A. Kennedy, S. M. Prokes, O. J. Glembocki, K. L. Wang, C. H. Chern

Research output: Contribution to journalArticlepeer-review

41 Citations (Scopus)

Abstract

Optically detected magnetic resonance has been employed for the first time on photoluminescence from a Si/Si1-xGex strained-layer superlattice. Emission bands occur at 0.87 and 0.8 eV. One of the resonances is anisotropic with g?=4.460.05 and g<0.4 and is assigned to holes of the Jz=3/2 valence band in the SiGe layers. This result demonstrates that at least part of the emission must originate from the superlattice region of these structures.

Original languageEnglish
Pages (from-to)1247-1250
Number of pages4
JournalPhysical review letters
Volume65
Issue number10
DOIs
Publication statusPublished - 1990

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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