Detection sensitivity and spatial resolution of reverse-bias pulsed deep-level transient spectroscopy for studying electric field-enhanced carrier emission

Reverse-bias pulsed deep-level transient spectroscopy (RDLTS) has recently been used for studies of electric field-enhanced emission from a deep-level defect. The sensitivity, spatial, and temperature resolutions of this technique are investigated and compared with those of DLTS. The electric field strength in a narrow region, where the transient capacitance signal comes from, can be accurately controlled by using RDLTS. The calculated results indicate that there is an optimal operating condition given by a range of emission pulse widths and heights. This operating condition is given for the best compromise of the temperature and spatial resolutions.