TY - GEN
T1 - Determination of residual resist layer thickness in e-beam lithography based on energy dispersive X-ray spectrometer
AU - Lee, Yung Chun
AU - Chiu, Cheng Yu
AU - Liu, Chuan Pu
AU - Hsiao, Fei Bin
AU - Chen, Chun Hung
PY - 2006
Y1 - 2006
N2 - In this paper, we report a method for determining the residual thickness of resist layer during e-beam lithography processes. The method is based on the energy dispersive x-ray spectroscopic (EDS) measurements on a silicon substrate deposited with a PMMA layer. The PMMA layer acts as the resist layer in e-beam lithography. From a calibration test, an empirical relationship is established between the EDS signal, electron energy, and PMMA film thickness. Form this empirical relationship the residual PMMA layer thickness after e-beam exposure and developing can be determined within an accuracy of 83%, which is very important to the subsequent etching processes. An important feature of the proposed method is that its lateral resolution depends only on the focused e-beam spot size and can be in the order of nm. With such resolution, the thickness of the resist layer under few nm line width can be measured. The proposed method to estimate the residual resist layer thickness plays a vital role in nano-fabrication or nano-patterning based on e-beam lithography technology.
AB - In this paper, we report a method for determining the residual thickness of resist layer during e-beam lithography processes. The method is based on the energy dispersive x-ray spectroscopic (EDS) measurements on a silicon substrate deposited with a PMMA layer. The PMMA layer acts as the resist layer in e-beam lithography. From a calibration test, an empirical relationship is established between the EDS signal, electron energy, and PMMA film thickness. Form this empirical relationship the residual PMMA layer thickness after e-beam exposure and developing can be determined within an accuracy of 83%, which is very important to the subsequent etching processes. An important feature of the proposed method is that its lateral resolution depends only on the focused e-beam spot size and can be in the order of nm. With such resolution, the thickness of the resist layer under few nm line width can be measured. The proposed method to estimate the residual resist layer thickness plays a vital role in nano-fabrication or nano-patterning based on e-beam lithography technology.
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U2 - 10.4028/0-87849-990-3.43
DO - 10.4028/0-87849-990-3.43
M3 - Conference contribution
AN - SCOPUS:35348827349
SN - 0878499903
SN - 9780878499908
T3 - Materials Science Forum
SP - 43
EP - 48
BT - Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture
PB - Trans Tech Publications Ltd
T2 - 2005 International Conference on Advanced Manufacture, ICAM2005
Y2 - 28 November 2005 through 2 December 2005
ER -