Determination of surface state density for GaAs and InAlAs by room temperature photoreflectance

G. S. Chang; W. C. Hwang; Y. C. Wang; Z. P. Yang; J. S. Hwang

doi:10.1063/1.370961

Determination of surface state density for GaAs and InAlAs by room temperature photoreflectance

G. S. Chang, W. C. Hwang, Y. C. Wang, Z. P. Yang, J. S. Hwang

Department of Photonics

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

Room temperature photoreflectance (PR) was used to investigate the surface state densities of GaAs and In_0.52Al_0.48As surface intrinsic-n⁺ structures. The built-in electric field and thus the surface barrier height are evaluated using the observed Franz-Keldysh oscillations in the PR spectra. Based on the thermionic emission theory and current-transport theory, the surface state density as well as the pinning position of the Fermi level can be determined from the dependence of the surface barrier height on the pump beam intensity. Even though this method is significantly simpler, easier to perform, and time efficient compared with other approaches, the results obtained agree with the literature.

Original language	English
Pages (from-to)	1765-1767
Number of pages	3
Journal	Journal of Applied Physics
Volume	86
Issue number	3
DOIs	https://doi.org/10.1063/1.370961
Publication status	Published - 1999 Aug

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.370961

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title = "Determination of surface state density for GaAs and InAlAs by room temperature photoreflectance",

abstract = "Room temperature photoreflectance (PR) was used to investigate the surface state densities of GaAs and In0.52Al0.48As surface intrinsic-n+ structures. The built-in electric field and thus the surface barrier height are evaluated using the observed Franz-Keldysh oscillations in the PR spectra. Based on the thermionic emission theory and current-transport theory, the surface state density as well as the pinning position of the Fermi level can be determined from the dependence of the surface barrier height on the pump beam intensity. Even though this method is significantly simpler, easier to perform, and time efficient compared with other approaches, the results obtained agree with the literature.",

author = "Chang, {G. S.} and Hwang, {W. C.} and Wang, {Y. C.} and Yang, {Z. P.} and Hwang, {J. S.}",

year = "1999",

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doi = "10.1063/1.370961",

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T1 - Determination of surface state density for GaAs and InAlAs by room temperature photoreflectance

AU - Chang, G. S.

AU - Hwang, W. C.

AU - Wang, Y. C.

AU - Yang, Z. P.

AU - Hwang, J. S.

PY - 1999/8

Y1 - 1999/8

N2 - Room temperature photoreflectance (PR) was used to investigate the surface state densities of GaAs and In0.52Al0.48As surface intrinsic-n+ structures. The built-in electric field and thus the surface barrier height are evaluated using the observed Franz-Keldysh oscillations in the PR spectra. Based on the thermionic emission theory and current-transport theory, the surface state density as well as the pinning position of the Fermi level can be determined from the dependence of the surface barrier height on the pump beam intensity. Even though this method is significantly simpler, easier to perform, and time efficient compared with other approaches, the results obtained agree with the literature.

AB - Room temperature photoreflectance (PR) was used to investigate the surface state densities of GaAs and In0.52Al0.48As surface intrinsic-n+ structures. The built-in electric field and thus the surface barrier height are evaluated using the observed Franz-Keldysh oscillations in the PR spectra. Based on the thermionic emission theory and current-transport theory, the surface state density as well as the pinning position of the Fermi level can be determined from the dependence of the surface barrier height on the pump beam intensity. Even though this method is significantly simpler, easier to perform, and time efficient compared with other approaches, the results obtained agree with the literature.

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Determination of surface state density for GaAs and InAlAs by room temperature photoreflectance

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