Abstract
Unstrained Ga0.64In0.36As0.84Sb0.16/InP single quantum-well structures were grown on InP substrates by metalorganic vapor phase epitaxy. Transmission electron microscopy and temperature-dependent photoluminescence (PL) measurements were performed. The valence-band offset of the GaInAsSb/ InP heterojunction was estimated by the dependence of PL peak energy on the well width at 8 K. We estimated the valence-band offset to be 70±5% of the band-gap difference for the Ga0.64In0.36As0.84Sb0.16/InP heterostructure.
Original language | English |
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Pages (from-to) | 717-719 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 74 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1999 Feb 1 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)