Determination of the valence-band offset for GaInAsSb/InP heterostructure

J. R. Chang; Y. K. Su; Yan-Ten Lu; D. H. Jaw; H. P. Shiao; W. Lin

doi:10.1063/1.123101

Determination of the valence-band offset for GaInAsSb/InP heterostructure

J. R. Chang, Y. K. Su, Yan-Ten Lu, D. H. Jaw, H. P. Shiao, W. Lin

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Unstrained Ga_0.64In_0.36As_0.84Sb_0.16/InP single quantum-well structures were grown on InP substrates by metalorganic vapor phase epitaxy. Transmission electron microscopy and temperature-dependent photoluminescence (PL) measurements were performed. The valence-band offset of the GaInAsSb/ InP heterojunction was estimated by the dependence of PL peak energy on the well width at 8 K. We estimated the valence-band offset to be 70±5% of the band-gap difference for the Ga_0.64In_0.36As_0.84Sb_0.16/InP heterostructure.

Original language	English
Pages (from-to)	717-719
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	5
DOIs	https://doi.org/10.1063/1.123101
Publication status	Published - 1999 Feb 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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abstract = "Unstrained Ga0.64In0.36As0.84Sb0.16/InP single quantum-well structures were grown on InP substrates by metalorganic vapor phase epitaxy. Transmission electron microscopy and temperature-dependent photoluminescence (PL) measurements were performed. The valence-band offset of the GaInAsSb/ InP heterojunction was estimated by the dependence of PL peak energy on the well width at 8 K. We estimated the valence-band offset to be 70±5% of the band-gap difference for the Ga0.64In0.36As0.84Sb0.16/InP heterostructure.",

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AU - Chang, J. R.

AU - Su, Y. K.

AU - Lu, Yan-Ten

AU - Jaw, D. H.

AU - Shiao, H. P.

AU - Lin, W.

PY - 1999/2/1

Y1 - 1999/2/1

N2 - Unstrained Ga0.64In0.36As0.84Sb0.16/InP single quantum-well structures were grown on InP substrates by metalorganic vapor phase epitaxy. Transmission electron microscopy and temperature-dependent photoluminescence (PL) measurements were performed. The valence-band offset of the GaInAsSb/ InP heterojunction was estimated by the dependence of PL peak energy on the well width at 8 K. We estimated the valence-band offset to be 70±5% of the band-gap difference for the Ga0.64In0.36As0.84Sb0.16/InP heterostructure.

AB - Unstrained Ga0.64In0.36As0.84Sb0.16/InP single quantum-well structures were grown on InP substrates by metalorganic vapor phase epitaxy. Transmission electron microscopy and temperature-dependent photoluminescence (PL) measurements were performed. The valence-band offset of the GaInAsSb/ InP heterojunction was estimated by the dependence of PL peak energy on the well width at 8 K. We estimated the valence-band offset to be 70±5% of the band-gap difference for the Ga0.64In0.36As0.84Sb0.16/InP heterostructure.

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Determination of the valence-band offset for GaInAsSb/InP heterostructure

Abstract

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