Determination of the valence-band offset for GaInAsSb/InP heterostructure

J. R. Chang, Y. K. Su, Y. T. Lu, D. H. Jaw, H. P. Shiao, W. Lin

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Unstrained Ga0.64In0.36As0.84Sb0.16/InP single quantum-well structures were grown on InP substrates by metalorganic vapor phase epitaxy. Transmission electron microscopy and temperature-dependent photoluminescence (PL) measurements were performed. The valence-band offset of the GaInAsSb/ InP heterojunction was estimated by the dependence of PL peak energy on the well width at 8 K. We estimated the valence-band offset to be 70±5% of the band-gap difference for the Ga0.64In0.36As0.84Sb0.16/InP heterostructure.

Original languageEnglish
Pages (from-to)717-719
Number of pages3
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 1999 Feb 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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