Determination of work functions in the Ta1-xAlx Ny/HfO2 advanced gate stack using combinatorial methodology

Kao Shuo Chang, Martin L. Green, Jason R. Hattrick-Simpers, Ichiro Takeuchi, John S. Suehle, Ozgur Celik, Stefan De Gendt

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Combinatorial methodology enables the generation of comprehensive and consistent data sets, compared with the "one-composition-at-a-time" approach. We demonstrate, for the first time, the combinatorial methodology applied to the work function (φm) extraction for Ta1-xAlx Ny alloys as metal gates on HfO2, for complementary metal-oxide-semiconductor applications, by automated measurement of over 2000 capacitor devices. Scanning X-ray microdiffraction indicates that a solid solution exists for the Ta1-xAlxNy libraries for 0.05 ≤ x ≤0.50. The equivalent oxide thickness maps offer a snapshot of gate stack thermal stability, which show that Ta1-x AlxNy alloys are stable up to 950 °C. The φm of the Ta1-xAlxNy libraries can be tuned as a function of gate metal composition over a wide (0.05 ≤ x ≤ 0.50) composition range, as well as by annealing. We suggest that Ta0.9Al0.1N1.24 gate metal electrodes may be useful for p-channel metal-oxide-semiconductor applications.

Original languageEnglish
Pages (from-to)2641-2647
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume55
Issue number10
DOIs
Publication statusPublished - 2008 Oct 17

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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