Development of EUV interference lithography for 25 nm line/space patterns

A. K. Sahoo; P. H. Chen; C. H. Lin; R. S. Liu; B. J. Lin; T. S. Kao; P. W. Chiu; T. P. Huang; W. Y. Lai; J. Wang; Y. Y. Lee; C. K. Kuan

doi:10.1016/j.mne.2023.100215

Development of EUV interference lithography for 25 nm line/space patterns

A. K. Sahoo, P. H. Chen, C. H. Lin, R. S. Liu, B. J. Lin, T. S. Kao, P. W. Chiu, T. P. Huang, W. Y. Lai, J. Wang, Y. Y. Lee, C. K. Kuan

Department of Photonics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this study, we present the performance of an extreme ultraviolet interference lithography (EUV-IL) setup that was reconstructed at Taiwan Light Source 21B2 EUV beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. An easy-to-perform fabrication method to produce a high-quality transmission grating mask and a simple design of experimental setup for EUV-IL were developed. The current EUV-IL setup is capable of fabricating line/space patterns down to 25 nm half-pitch in hydrogen silsesquioxane (HSQ) resist. Preliminary exposure results revealed that optimized slit width and exposure time significantly improved line/space pattern quality. The current EUV-IL tool at NSRRC can be used for nano-patterning and resist screening to advance the next generation of semiconductor devices.

Original language	English
Article number	100215
Journal	Micro and Nano Engineering
Volume	20
DOIs	https://doi.org/10.1016/j.mne.2023.100215
Publication status	Published - 2023 Sept

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mne.2023.100215

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@article{b301fed4ce3d426f8d7c9e10b38e6f4f,

title = "Development of EUV interference lithography for 25 nm line/space patterns",

abstract = "In this study, we present the performance of an extreme ultraviolet interference lithography (EUV-IL) setup that was reconstructed at Taiwan Light Source 21B2 EUV beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. An easy-to-perform fabrication method to produce a high-quality transmission grating mask and a simple design of experimental setup for EUV-IL were developed. The current EUV-IL setup is capable of fabricating line/space patterns down to 25 nm half-pitch in hydrogen silsesquioxane (HSQ) resist. Preliminary exposure results revealed that optimized slit width and exposure time significantly improved line/space pattern quality. The current EUV-IL tool at NSRRC can be used for nano-patterning and resist screening to advance the next generation of semiconductor devices.",

author = "Sahoo, {A. K.} and Chen, {P. H.} and Lin, {C. H.} and Liu, {R. S.} and Lin, {B. J.} and Kao, {T. S.} and Chiu, {P. W.} and Huang, {T. P.} and Lai, {W. Y.} and J. Wang and Lee, {Y. Y.} and Kuan, {C. K.}",

note = "Publisher Copyright: {\textcopyright} 2023 The Authors",

year = "2023",

month = sep,

doi = "10.1016/j.mne.2023.100215",

language = "English",

volume = "20",

journal = "Micro and Nano Engineering",

issn = "2590-0072",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Development of EUV interference lithography for 25 nm line/space patterns

AU - Sahoo, A. K.

AU - Chen, P. H.

AU - Lin, C. H.

AU - Liu, R. S.

AU - Lin, B. J.

AU - Kao, T. S.

AU - Chiu, P. W.

AU - Huang, T. P.

AU - Lai, W. Y.

AU - Wang, J.

AU - Lee, Y. Y.

AU - Kuan, C. K.

PY - 2023/9

Y1 - 2023/9

N2 - In this study, we present the performance of an extreme ultraviolet interference lithography (EUV-IL) setup that was reconstructed at Taiwan Light Source 21B2 EUV beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. An easy-to-perform fabrication method to produce a high-quality transmission grating mask and a simple design of experimental setup for EUV-IL were developed. The current EUV-IL setup is capable of fabricating line/space patterns down to 25 nm half-pitch in hydrogen silsesquioxane (HSQ) resist. Preliminary exposure results revealed that optimized slit width and exposure time significantly improved line/space pattern quality. The current EUV-IL tool at NSRRC can be used for nano-patterning and resist screening to advance the next generation of semiconductor devices.

AB - In this study, we present the performance of an extreme ultraviolet interference lithography (EUV-IL) setup that was reconstructed at Taiwan Light Source 21B2 EUV beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. An easy-to-perform fabrication method to produce a high-quality transmission grating mask and a simple design of experimental setup for EUV-IL were developed. The current EUV-IL setup is capable of fabricating line/space patterns down to 25 nm half-pitch in hydrogen silsesquioxane (HSQ) resist. Preliminary exposure results revealed that optimized slit width and exposure time significantly improved line/space pattern quality. The current EUV-IL tool at NSRRC can be used for nano-patterning and resist screening to advance the next generation of semiconductor devices.

UR - http://www.scopus.com/inward/record.url?scp=85163892810&partnerID=8YFLogxK

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U2 - 10.1016/j.mne.2023.100215

DO - 10.1016/j.mne.2023.100215

M3 - Article

AN - SCOPUS:85163892810

SN - 2590-0072

VL - 20

JO - Micro and Nano Engineering

JF - Micro and Nano Engineering

M1 - 100215

ER -

Development of EUV interference lithography for 25 nm line/space patterns

Abstract

All Science Journal Classification (ASJC) codes

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