Development of ZnTe contacts for Cd1-xMgxTe thin-film solar cells for tandem applications

Joel N. Duenow, Ramesh G. Dhere, Jian V. Li, Wyatt K. Metzger, Anna Duda, Timothy A. Gessert

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Polycrystalline Cd1-xMgxTe (CMT) thin films are a potential absorber material for two-junction thin-film tandem solar cell applications because the desired top cell bandgap range of 1.6 to 1.8 eV is readily obtained using CMT with only small resultant changes in the lattice constant from that of CdTe. Tandem devices require the top cell to have a transparent back contact to transmit the sub-bandgap spectrum to the bottom cell. Sputtered Cu-doped ZnTe (ZnTe:Cu) thin films, which offer potential as a transparent back contact interface layer, have been used successfully in CdTe devices. We apply ZnTe:Cu back contacts to CMT devices to continue development toward a transparent top cell. We describe the effects of depositing ZnTe:Cu at different temperatures and with different Cu contents on the net acceptor concentration, minority carrier lifetime, and device performance. We present here the highest reported CMT device efficiency of 9.6% at a bandgap of 1.57 eV.

Original languageEnglish
Title of host publicationThin-Film Compound Semiconductor Photovoltaics - 2009
Pages405-410
Number of pages6
Volume1165
Publication statusPublished - 2010
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2009 Apr 142009 Apr 16

Other

Other2009 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period09-04-1409-04-16

Fingerprint

Energy gap
solar cells
Thin films
thin films
cells
Carrier lifetime
Lattice constants
Solar cells
absorbers (materials)
carrier lifetime
minority carriers
Thin film solar cells
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Duenow, J. N., Dhere, R. G., Li, J. V., Metzger, W. K., Duda, A., & Gessert, T. A. (2010). Development of ZnTe contacts for Cd1-xMgxTe thin-film solar cells for tandem applications. In Thin-Film Compound Semiconductor Photovoltaics - 2009 (Vol. 1165, pp. 405-410)
Duenow, Joel N. ; Dhere, Ramesh G. ; Li, Jian V. ; Metzger, Wyatt K. ; Duda, Anna ; Gessert, Timothy A. / Development of ZnTe contacts for Cd1-xMgxTe thin-film solar cells for tandem applications. Thin-Film Compound Semiconductor Photovoltaics - 2009. Vol. 1165 2010. pp. 405-410
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Duenow, JN, Dhere, RG, Li, JV, Metzger, WK, Duda, A & Gessert, TA 2010, Development of ZnTe contacts for Cd1-xMgxTe thin-film solar cells for tandem applications. in Thin-Film Compound Semiconductor Photovoltaics - 2009. vol. 1165, pp. 405-410, 2009 MRS Spring Meeting, San Francisco, CA, United States, 09-04-14.

Development of ZnTe contacts for Cd1-xMgxTe thin-film solar cells for tandem applications. / Duenow, Joel N.; Dhere, Ramesh G.; Li, Jian V.; Metzger, Wyatt K.; Duda, Anna; Gessert, Timothy A.

Thin-Film Compound Semiconductor Photovoltaics - 2009. Vol. 1165 2010. p. 405-410.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - Polycrystalline Cd1-xMgxTe (CMT) thin films are a potential absorber material for two-junction thin-film tandem solar cell applications because the desired top cell bandgap range of 1.6 to 1.8 eV is readily obtained using CMT with only small resultant changes in the lattice constant from that of CdTe. Tandem devices require the top cell to have a transparent back contact to transmit the sub-bandgap spectrum to the bottom cell. Sputtered Cu-doped ZnTe (ZnTe:Cu) thin films, which offer potential as a transparent back contact interface layer, have been used successfully in CdTe devices. We apply ZnTe:Cu back contacts to CMT devices to continue development toward a transparent top cell. We describe the effects of depositing ZnTe:Cu at different temperatures and with different Cu contents on the net acceptor concentration, minority carrier lifetime, and device performance. We present here the highest reported CMT device efficiency of 9.6% at a bandgap of 1.57 eV.

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Duenow JN, Dhere RG, Li JV, Metzger WK, Duda A, Gessert TA. Development of ZnTe contacts for Cd1-xMgxTe thin-film solar cells for tandem applications. In Thin-Film Compound Semiconductor Photovoltaics - 2009. Vol. 1165. 2010. p. 405-410