Device characteristics of GaAs-based heterojunction bipolar transistors using an InGaAs/GaAsP strain-compensated layer as a base material

Cheng Hsien Wu, Yan Kuin Su, Shoou Jinn Chang, Ying Sheng Huang, Hung Pin Hsu

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1 Citation (Scopus)

Abstract

An InGaAs/GaAsP strain-compensated layer has been proposed as a base material for GaAs-based double heterojunction bipolar transistors (DHBTs). As known, decreasing bandgap energy of the base layer in heterojunction bipolar transistors (HBTs) can result in a smaller turn-on voltage. Using InGaAs as a base material is one possible approach to achieve the aim. However, compressive strain induced by InGaAs diminishes the influence of indium-adding-induced bandgap energy reduction, and thus abates the advantage of turn-on voltage reduction. In this study, a 280 Å GaAs0.81P0.19 layer has been inserted below the In0.054Ga0.946As base layer to compensate the compressive strain induced by the InGaAs base layer. The result shows that the utilization of an InGaAs/GaAsP strain-compensated layer results in a reduction of the turn-on voltage by 20 mV. A turn-on voltage reduction of 190 mV over a conventional HBT with a GaAs base layer is achieved by utilizing the In0.054Ga0.946As/GaAs 0.841P0.19 strain-compensated base layer. This particular DHBT has a small offset voltage of 55 mV and a knee voltage of 0.6 V. A peak current gain of 58.98, a unity-current-gain cut-off frequency fT of 22 GHz and a unilateral power gain cut-off frequency fMAX of 25 GHz are also achieved for this particular DHBT.

Original languageEnglish
Pages (from-to)828-832
Number of pages5
JournalSemiconductor Science and Technology
Volume19
Issue number7
DOIs
Publication statusPublished - 2004 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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