Device linear improvement using SiGe/Si heterostructure delta-doped-channel field-effect transistors

Pei Wei Chien, San Lein Wu, Shoou Jinn Chang, Yan Ping Wang, Hidetoshi Miura, Yasuhiro Shiraki

Research output: Contribution to journalArticlepeer-review

Abstract

Results of boron delta-doped-channel (DDC) field-effect transistors fabricated on Si0.7Ge0.3/Si strained-layer heterostructures grown by solid-source molecular beam epitaxy (SSMBE) are reported. A device with a 1×100 μm2 gate exhibits an extrinsic transconductance as high as 22 mS/mm. Due to the absence of parallel conduction effects under high-current-level operation in this device, as compared to a modulation-doped structure, a wide and flat range of uniform gm distribution of 4.5 V together with a high gate-to-drain breakdown voltage (>25 V) and high current density of 120 mA/mm is obtained at room temperature, which is expected to provide an additional degree of freedom for Si-based device applications.

Original languageEnglish
Pages (from-to)L1149-L1151
JournalJapanese Journal of Applied Physics
Volume39
Issue number11 B
DOIs
Publication statusPublished - 2000 Nov 15

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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