Diagnosis of MRAM write disturbance fault

Chin Lung Su, Chih Wea Tsai, Ching Yi Chen, Wan Yu Lo, Cheng Wen Wu, Ji Jan Chen, Wen Ching Wu, Chien Chung Hung, Ming Jer Kao

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


In this paper, we propose a new test method to detect write disturbance fault (WDF) for magnetic RAM (MRAM). Furthermore, an adaptive diagnosis algorithm (ADA) is also introduced to identify and diagnose the WDF for MRAM. The proposed test method can evaluate process stability and uniformity. We also develop a built-in self-test (BIST) circuit that supports the proposed WDF diagnosis test method. A 1-Mb toggle MRAM prototype chip with the proposed BIST circuit has been designed and fabricated using a special 0.15-μm CMOS technology. The BIST circuit overhead is only about 0.05% with respect to the 1-Mb MRAM. The test time is reduced by about 30% as compared with the test method without using the decision write mechanism. The chip measurement results show the efficiency of our proposed method.

Original languageEnglish
Article number5229479
Pages (from-to)1762-1766
Number of pages5
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Issue number12
Publication statusPublished - 2010 Dec 1

All Science Journal Classification (ASJC) codes

  • Software
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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