Diagonal test and diagnostic schemes for flash memories

Sau Kwo Chiu, Jen Chieh Yeh, Chih Tsun Huang, Cheng Wen Wu

Research output: Contribution to journalConference article

21 Citations (Scopus)

Abstract

Embedded flash memory plays an increasingly important role for system-on-chip (SOC), especially for battery-powered devices. Testing and diagnosis of embedded flash memory is becoming one of the key development and production issues for many SOC products. Moreover, high density, high capacity, and the integration of heterogeneous cores in an SOC results in long test time, which in turn lead to high test cost. In this paper we propose a new diagonal test algorithm for flash memory that effectively reduces the test time without sacrificing the fault coverage. Both disturb faults and conventional RAM faults are covered. A diagnostic algorithm is also presented, which can distinguish among all the disturb faults and most of the conventional RAM faults. Finally, a built-in self-diagnosis (BISD) scheme is proposed. The BISD circuit implements our algorithms and user-defined ones, and its area overhead is low, e.g., it contains only about 2.551 gates (2-3%) for a 2Mb flash memory. The test time by our diagonal test is reduced by about 42.69% as compared with the best March-like algorithm reported so far.

Original languageEnglish
Pages (from-to)37-46
Number of pages10
JournalIEEE International Test Conference (TC)
Publication statusPublished - 2002 Jan 1
EventProceedings International Test Conference - Baltimore, MD, United States
Duration: 2002 Oct 72002 Oct 10

Fingerprint

Flash Memory
Flash memory
Diagnostics
Fault
Random access storage
Battery
Networks (circuits)
Testing
Coverage
System-on-chip
Costs

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Applied Mathematics

Cite this

Chiu, Sau Kwo ; Yeh, Jen Chieh ; Huang, Chih Tsun ; Wu, Cheng Wen. / Diagonal test and diagnostic schemes for flash memories. In: IEEE International Test Conference (TC). 2002 ; pp. 37-46.
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Diagonal test and diagnostic schemes for flash memories. / Chiu, Sau Kwo; Yeh, Jen Chieh; Huang, Chih Tsun; Wu, Cheng Wen.

In: IEEE International Test Conference (TC), 01.01.2002, p. 37-46.

Research output: Contribution to journalConference article

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AU - Huang, Chih Tsun

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N2 - Embedded flash memory plays an increasingly important role for system-on-chip (SOC), especially for battery-powered devices. Testing and diagnosis of embedded flash memory is becoming one of the key development and production issues for many SOC products. Moreover, high density, high capacity, and the integration of heterogeneous cores in an SOC results in long test time, which in turn lead to high test cost. In this paper we propose a new diagonal test algorithm for flash memory that effectively reduces the test time without sacrificing the fault coverage. Both disturb faults and conventional RAM faults are covered. A diagnostic algorithm is also presented, which can distinguish among all the disturb faults and most of the conventional RAM faults. Finally, a built-in self-diagnosis (BISD) scheme is proposed. The BISD circuit implements our algorithms and user-defined ones, and its area overhead is low, e.g., it contains only about 2.551 gates (2-3%) for a 2Mb flash memory. The test time by our diagonal test is reduced by about 42.69% as compared with the best March-like algorithm reported so far.

AB - Embedded flash memory plays an increasingly important role for system-on-chip (SOC), especially for battery-powered devices. Testing and diagnosis of embedded flash memory is becoming one of the key development and production issues for many SOC products. Moreover, high density, high capacity, and the integration of heterogeneous cores in an SOC results in long test time, which in turn lead to high test cost. In this paper we propose a new diagonal test algorithm for flash memory that effectively reduces the test time without sacrificing the fault coverage. Both disturb faults and conventional RAM faults are covered. A diagnostic algorithm is also presented, which can distinguish among all the disturb faults and most of the conventional RAM faults. Finally, a built-in self-diagnosis (BISD) scheme is proposed. The BISD circuit implements our algorithms and user-defined ones, and its area overhead is low, e.g., it contains only about 2.551 gates (2-3%) for a 2Mb flash memory. The test time by our diagonal test is reduced by about 42.69% as compared with the best March-like algorithm reported so far.

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