Diamond CVD by microwave plasmas in argon-diluted methane without or with 2% hydrogen additive

Yon-Hua Tzeng, Y. K. Liu

Research output: Contribution to journalArticle

20 Citations (Scopus)


Many research groups have reported that when methane was diluted by argon for microwave plasma-enhanced chemical vapor deposition (CVD) of diamond, growth of large-grain microcrystalline diamond (MCD) was suppressed, while nanocrystalline diamond (NCD) was deposited. We report for the first time the growth of well-faceted MCD by microwave plasma CVD in argon-diluted methane without molecular hydrogen additive or with only little (2%) hydrogen additive. High-density C2 radicals generated in the plasmas might be responsible for both the promotion of secondary nucleation of diamond for the growth of NCD in atomic hydrogen deficient environments and the promotion of the growth of large-grain diamond at the presence of adequate atomic hydrogen leading to the deposition of MCD. A nonuniform plasma ball was applied to grow both MCD and MCD simultaneous on the same silicon substrate in the same gas mixture.

Original languageEnglish
Pages (from-to)261-265
Number of pages5
JournalDiamond and Related Materials
Issue number3-7
Publication statusPublished - 2005 Mar 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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