Diamond-like carbon as gate dielectric for metal-insulator-semiconductor applications

Shing Long Tyan, Hsiang Chi Tang, Zhang Wei Wu, Ting Shan Mo

Research output: Contribution to journalArticle

Abstract

Diamond-like carbon (DLC) has been studied as a dielectric material for future metal-insulator-semiconductor (MIS) technology. In this paper, ultrathin DLC films were deposited on silicon substrates by using the dc magnetron sputtering technique at various deposition voltages. The current-voltage characteristics indicated that the leakage currents of the MIS devices decreased with an increase in deposition voltages, and that a low leakage current (3.2 × 10-8 A/cm2) was achieved at -2 V bias voltage. The deposition voltage effects on the structures of films were investigated through Raman spectroscopy, which indicated that the sp3 bonding fraction decreased with an increase in the deposition voltage. The ramp-voltage breakdown test revealed high effective breakdown electric field (>85 MV/cm) for the MIS device with the DLC film deposited at 1100-V deposition. Stress-induced leakage current measurement indicated that the DLC film exhibited excellent reliability.

Original languageEnglish
Article number1950423
JournalModern Physics Letters B
Volume33
Issue number34
DOIs
Publication statusPublished - 2019 Dec 10

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics

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