Dielectric properties of a new ceramic system (1 - x)Mg4Nb2O9-xCaTiO3 at microwave frequency

Cheng-Liang Huang, Jhih Yong Chen, Chih Chao Liang

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The microstructures and the microwave dielectric properties of the (1 - x)Mg4Nb2O9-xCaTiO3 ceramic system were investigated. In order to achieve a temperature-stable material, CaTiO3f ∼ 800 ppm/°C) was chosen as a τf compensator and added to Mg4Nb2O9f ∼ -70 ppm/°C) to form a two phase system. It was confirmed by the XRD and EDX analysis. By appropriately adjusting the x-value in the (1 - x)Mg4Nb2O9-xCaTiO3 ceramic system, near-zero τf value can be achieved. A new microwave dielectric material, 0.5Mg4Nb2O9-0.5CaTiO3 applicable in microwave devices is suggested and possesses the dielectric properties of a dielectric constant εr ∼ 24.8, a Q × f value ∼82,000 GHz (measured at 9.1 GHz) and a τf value ∼-0.3 ppm/°C.

Original languageEnglish
Pages (from-to)1111-1115
Number of pages5
JournalMaterials Research Bulletin
Volume44
Issue number5
DOIs
Publication statusPublished - 2009 May 6

Fingerprint

Microwave frequencies
microwave frequencies
Dielectric properties
dielectric properties
Microwaves
ceramics
microwaves
Microwave devices
Energy dispersive spectroscopy
binary systems (materials)
Permittivity
compensators
Microstructure
adjusting
permittivity
microstructure
Temperature
temperature
perovskite

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Dielectric properties of a new ceramic system (1 - x)Mg4Nb2O9-xCaTiO3 at microwave frequency",
abstract = "The microstructures and the microwave dielectric properties of the (1 - x)Mg4Nb2O9-xCaTiO3 ceramic system were investigated. In order to achieve a temperature-stable material, CaTiO3 (τf ∼ 800 ppm/°C) was chosen as a τf compensator and added to Mg4Nb2O9 (τf ∼ -70 ppm/°C) to form a two phase system. It was confirmed by the XRD and EDX analysis. By appropriately adjusting the x-value in the (1 - x)Mg4Nb2O9-xCaTiO3 ceramic system, near-zero τf value can be achieved. A new microwave dielectric material, 0.5Mg4Nb2O9-0.5CaTiO3 applicable in microwave devices is suggested and possesses the dielectric properties of a dielectric constant εr ∼ 24.8, a Q × f value ∼82,000 GHz (measured at 9.1 GHz) and a τf value ∼-0.3 ppm/°C.",
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Dielectric properties of a new ceramic system (1 - x)Mg4Nb2O9-xCaTiO3 at microwave frequency. / Huang, Cheng-Liang; Chen, Jhih Yong; Liang, Chih Chao.

In: Materials Research Bulletin, Vol. 44, No. 5, 06.05.2009, p. 1111-1115.

Research output: Contribution to journalArticle

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AU - Chen, Jhih Yong

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N2 - The microstructures and the microwave dielectric properties of the (1 - x)Mg4Nb2O9-xCaTiO3 ceramic system were investigated. In order to achieve a temperature-stable material, CaTiO3 (τf ∼ 800 ppm/°C) was chosen as a τf compensator and added to Mg4Nb2O9 (τf ∼ -70 ppm/°C) to form a two phase system. It was confirmed by the XRD and EDX analysis. By appropriately adjusting the x-value in the (1 - x)Mg4Nb2O9-xCaTiO3 ceramic system, near-zero τf value can be achieved. A new microwave dielectric material, 0.5Mg4Nb2O9-0.5CaTiO3 applicable in microwave devices is suggested and possesses the dielectric properties of a dielectric constant εr ∼ 24.8, a Q × f value ∼82,000 GHz (measured at 9.1 GHz) and a τf value ∼-0.3 ppm/°C.

AB - The microstructures and the microwave dielectric properties of the (1 - x)Mg4Nb2O9-xCaTiO3 ceramic system were investigated. In order to achieve a temperature-stable material, CaTiO3 (τf ∼ 800 ppm/°C) was chosen as a τf compensator and added to Mg4Nb2O9 (τf ∼ -70 ppm/°C) to form a two phase system. It was confirmed by the XRD and EDX analysis. By appropriately adjusting the x-value in the (1 - x)Mg4Nb2O9-xCaTiO3 ceramic system, near-zero τf value can be achieved. A new microwave dielectric material, 0.5Mg4Nb2O9-0.5CaTiO3 applicable in microwave devices is suggested and possesses the dielectric properties of a dielectric constant εr ∼ 24.8, a Q × f value ∼82,000 GHz (measured at 9.1 GHz) and a τf value ∼-0.3 ppm/°C.

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