Dielectric properties of Bi2(Zn1/3Nb2/3)2O7 electroceramics and thin films

Hsiu Fung Cheng, Yi Chun Chen, You Ming Tsau, Petr Kužel, Jan Petzelt, Ying Hao Zhu, I. Nan Lin

Research output: Contribution to journalArticlepeer-review


Dielectric response of directly using terahertz (THz) spectroscopy. In the preparation of the ceramic materials, the two-step process exhibits a marked advantage over the one-step process in that the ceramic material's characteristics are relatively insensitive to the sintering parameters. The ceramic materials can achieve high density (7.2 g/cm3), large dielectric constant (K = 67), high quality factor (Q xf≅80,000 GHz) and small temperature coefficient of resonance frequency (rf ≅ -6 ppm/°C), when processed at optimized sintering temperature (1050°C, 4 h). Crystalline BiZN thin films, can be easily obtained when the films were in-situ deposited at high enough substrate temperature 450-600°C (30 min). The dielectric constant of BiZN thin films in THz frequency regime, (ε′)f·THz = 32, is markedly smaller than the (ε′)b·THz value of BiZN bulk materials, and the quality factor of the thin films is less than 20% of the bulk materials.

Original languageEnglish
Pages (from-to)1605-1608
Number of pages4
JournalJournal of the European Ceramic Society
Issue number10-11
Publication statusPublished - 2001

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry


Dive into the research topics of 'Dielectric properties of Bi<sub>2</sub>(Zn<sub>1/3</sub>Nb<sub>2/3</sub>)<sub>2</sub>O<sub>7</sub> electroceramics and thin films'. Together they form a unique fingerprint.

Cite this