Dielectric properties of B2O3 doped Sm(Co 1/2Ti1/2)O3 ceramics at microwave frequency

Hong Tie Soong, Cheng Hsing Hsu, Cheng Liang Huang, Ming Ta Kuo

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Abstract

The microwave dielectric properties and the microstructures of Sm(Co 1/2Ti1/2)O3 ceramics with B2O 3 additions (0.25 and 0.5 wt%) prepared by conventional solid-state route have been investigated. The prepared Sm(Co1/2Ti 1/2)O3 exhibited a mixture of Co and Ti showing 1:1 order in the B-site. Doping with B2O3 (up to 0.5 wt%) can effectively promote the densification of Sm(Co1/2Ti 1/2)O3 ceramics with low sintering temperature. It is found that Sm(Co1/2Ti1/2)O3 ceramics can be sintered at 1,260 °C due to the grain boundary phase effect of B 2O3 addition. At 1,290 °C, Sm(Co1/2Ti 1/2)O3 ceramics with 0.5 wt% B2O3 addition possess a dielectric constant (ε r) of 27.7, a Q × f value of 33,600 (at 9 GHz) and a temperature coefficient of resonant frequency (τf) of -11.4 ppm/ °C. The B2O 3-doped Sm(Co1/2Ti1/2)O3 ceramics can find applications in microwave devices requiring low sintering temperature.

Original languageEnglish
Pages (from-to)2393-2398
Number of pages6
JournalJournal of Materials Science
Volume42
Issue number7
DOIs
Publication statusPublished - 2007 Apr 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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