Dielectric properties of nitric oxide-annealed gate oxides grown on nitrogen-implanted silicon substrates

Yung-Yu Chen, C. H. Chien, J. C. Lou

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The characteristics of nitric oxide (NO)-annealed nitrided gate oxides grown on nitrogen-implanted silicon substrates (NIS) were studied in this paper. It was found that nitrogen accumulation occurred near the interface after NO-annealing, while NIS-grown nitrided oxide produced a uniform nitrogen distribution in the dielectric bulk. Moreover, it was found that the dielectric reliability is strongly dependent on the dosages used for NIS preparation. NIS with dosages smaller than 1014 cm- 2 was found not to suppress the oxidation rate and to degrade the dielectric reliability. On the other hand, the samples with a dosage of 1015 cm- 2 not only exhibited a significantly reduced oxidation rate, making it suitable for growing oxides of multiple thicknesses in sub-3 nm technologies meeting the Systems on Chip requirement, but also improved the dielectric reliability. NO-annealed NIS-grown nitrided oxides depict superior dielectric reliability and this technique appears to be suitable to replace the traditional SiO2 at 0.13 μm technology node and beyond.

Original languageEnglish
Pages (from-to)264-268
Number of pages5
JournalThin Solid Films
Volume513
Issue number1-2
DOIs
Publication statusPublished - 2006 Aug 14

Fingerprint

Nitric oxide
Silicon
nitric oxide
Dielectric properties
Oxides
dielectric properties
Nitric Oxide
Nitrogen
nitrogen
oxides
silicon
Substrates
dosage
Oxidation
oxidation
chips
Annealing
requirements
preparation
annealing

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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abstract = "The characteristics of nitric oxide (NO)-annealed nitrided gate oxides grown on nitrogen-implanted silicon substrates (NIS) were studied in this paper. It was found that nitrogen accumulation occurred near the interface after NO-annealing, while NIS-grown nitrided oxide produced a uniform nitrogen distribution in the dielectric bulk. Moreover, it was found that the dielectric reliability is strongly dependent on the dosages used for NIS preparation. NIS with dosages smaller than 1014 cm- 2 was found not to suppress the oxidation rate and to degrade the dielectric reliability. On the other hand, the samples with a dosage of 1015 cm- 2 not only exhibited a significantly reduced oxidation rate, making it suitable for growing oxides of multiple thicknesses in sub-3 nm technologies meeting the Systems on Chip requirement, but also improved the dielectric reliability. NO-annealed NIS-grown nitrided oxides depict superior dielectric reliability and this technique appears to be suitable to replace the traditional SiO2 at 0.13 μm technology node and beyond.",
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Dielectric properties of nitric oxide-annealed gate oxides grown on nitrogen-implanted silicon substrates. / Chen, Yung-Yu; Chien, C. H.; Lou, J. C.

In: Thin Solid Films, Vol. 513, No. 1-2, 14.08.2006, p. 264-268.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Dielectric properties of nitric oxide-annealed gate oxides grown on nitrogen-implanted silicon substrates

AU - Chen, Yung-Yu

AU - Chien, C. H.

AU - Lou, J. C.

PY - 2006/8/14

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N2 - The characteristics of nitric oxide (NO)-annealed nitrided gate oxides grown on nitrogen-implanted silicon substrates (NIS) were studied in this paper. It was found that nitrogen accumulation occurred near the interface after NO-annealing, while NIS-grown nitrided oxide produced a uniform nitrogen distribution in the dielectric bulk. Moreover, it was found that the dielectric reliability is strongly dependent on the dosages used for NIS preparation. NIS with dosages smaller than 1014 cm- 2 was found not to suppress the oxidation rate and to degrade the dielectric reliability. On the other hand, the samples with a dosage of 1015 cm- 2 not only exhibited a significantly reduced oxidation rate, making it suitable for growing oxides of multiple thicknesses in sub-3 nm technologies meeting the Systems on Chip requirement, but also improved the dielectric reliability. NO-annealed NIS-grown nitrided oxides depict superior dielectric reliability and this technique appears to be suitable to replace the traditional SiO2 at 0.13 μm technology node and beyond.

AB - The characteristics of nitric oxide (NO)-annealed nitrided gate oxides grown on nitrogen-implanted silicon substrates (NIS) were studied in this paper. It was found that nitrogen accumulation occurred near the interface after NO-annealing, while NIS-grown nitrided oxide produced a uniform nitrogen distribution in the dielectric bulk. Moreover, it was found that the dielectric reliability is strongly dependent on the dosages used for NIS preparation. NIS with dosages smaller than 1014 cm- 2 was found not to suppress the oxidation rate and to degrade the dielectric reliability. On the other hand, the samples with a dosage of 1015 cm- 2 not only exhibited a significantly reduced oxidation rate, making it suitable for growing oxides of multiple thicknesses in sub-3 nm technologies meeting the Systems on Chip requirement, but also improved the dielectric reliability. NO-annealed NIS-grown nitrided oxides depict superior dielectric reliability and this technique appears to be suitable to replace the traditional SiO2 at 0.13 μm technology node and beyond.

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