TY - JOUR
T1 - Dielectric screening for carbon nanotubes in a gating electric field
AU - Chen, S. C.
AU - Shyu, F. L.
AU - Lue, C. S.
AU - Lin, M. F.
N1 - Funding Information:
This work was supported in part by the National Science Council of Taiwan under the Grant Nos. NSC 93-2112-M-006-002 and NSC-93-2112-M-006-001.
PY - 2006/5
Y1 - 2006/5
N2 - We use the sp3 tight-binding model to calculate electronic structures of single-walled carbon nanotubes. All the π and σ electrons would take part in charge screening. As a result of the cylindrical symmetry, the momentum (q) and angular momentum transfer (L) are conserved in the electron-electron Coulomb interactions. The static dielectric function ε (q,L), which determines the charge screening ability, is evaluated from the random-phase approximation. ε of L = 1 at long wavelength limit ( q → 0) is very important in understanding the dielectric screening in the presence of a uniform transverse electric field E⊥. ε ( q = 0, L = 1) hardly depends on the chiral angle, and the dependence on the nanotube radius is weak. It quickly grows as the Fermi level increases, that is, the screening response is largely enhanced by the increasing free carriers.
AB - We use the sp3 tight-binding model to calculate electronic structures of single-walled carbon nanotubes. All the π and σ electrons would take part in charge screening. As a result of the cylindrical symmetry, the momentum (q) and angular momentum transfer (L) are conserved in the electron-electron Coulomb interactions. The static dielectric function ε (q,L), which determines the charge screening ability, is evaluated from the random-phase approximation. ε of L = 1 at long wavelength limit ( q → 0) is very important in understanding the dielectric screening in the presence of a uniform transverse electric field E⊥. ε ( q = 0, L = 1) hardly depends on the chiral angle, and the dependence on the nanotube radius is weak. It quickly grows as the Fermi level increases, that is, the screening response is largely enhanced by the increasing free carriers.
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U2 - 10.1016/j.physe.2005.12.108
DO - 10.1016/j.physe.2005.12.108
M3 - Article
AN - SCOPUS:33646168308
SN - 1386-9477
VL - 32
SP - 577
EP - 580
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
IS - 1-2 SPEC. ISS.
ER -