Dielectric stack passivation on boron- and phosphorus-diffused surfaces and 20% efficient PERT cell on n-CZ silicon substrate

Bill Nemeth, Hao Chih Yuan, Matthew Page, Vincenzo Lasalvia, Rohan Chaukulkar, Lynn Gedvilas, Jian V. Li, Paul Stradins

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We present a surface passivation study of a B-diffused emitter and P-diffused back-surface field (BSF) of n-CZ Si substrates. The optimized passivation layers are subsequently incorporated into a 20%-efficient passivated emitter, rear totally-diffused (PERT) cell with Voc of 672 mV. On the P-diffused, concentrated KOH-planarized BSF side, we compare different passivating plasma enhanced chemical vapor deposition (PECVD) SiNx layer compositions. We demonstrate that a favorable combination of best passivation quality is achieved by a stack of thermal oxide grown at ∼700°C, followed by a bilayer SiNx, consisting of stoichiometric PECVD nitride and capped with Si-rich nitride, or H-dilution nitride. The stack results in surface passivation quality of Jo ∼ 17 fA/cm2 for bilayer SiNx and 14 fA/cm2 for H-SiNx on lightly P-doped BSF, and is very resistive to HF-containing wet etches. Surface preparation, deposition parameters, and post-growth annealing collaborate to define the effectiveness of the passivation. Their optimization is critical for integration of SiNx:H into our high-efficiency solar cells. On the B-diffused textured emitter side, we use atomic layer deposition (ALD)-deposited Al2O3 for surface passivation and low-temperature stoichiometric PECVD SiNx for the anti-reflection coating. We discuss deposition conditions and thermal treatments for both ALD Al2O3 and PECVD nitride that result in the optimized passivation resulting in Jo ∼ 52 fA/cm2 and that prevent the blistering of the film.

Original languageEnglish
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages629-633
Number of pages5
ISBN (Electronic)9781479943982
DOIs
Publication statusPublished - 2014 Oct 15
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: 2014 Jun 82014 Jun 13

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period14-06-0814-06-13

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Nemeth, B., Yuan, H. C., Page, M., Lasalvia, V., Chaukulkar, R., Gedvilas, L., Li, J. V., & Stradins, P. (2014). Dielectric stack passivation on boron- and phosphorus-diffused surfaces and 20% efficient PERT cell on n-CZ silicon substrate. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 629-633). [6925001] (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925001