TY - JOUR
T1 - Digital image correlation of SEM images for surface deformation of CMOS IC
AU - Chen, Terry Yuan Fang
AU - Chen, Tzu Ching
AU - Cheng, Fa Yen
AU - Tsai, Ang Ting
AU - Lin, Ming Tzer
N1 - Funding Information:
This work will not be possible without the support of the Ministry of Science and Technology , Taiwan under MOST 106-2221-E-005-012-MY3 and 105-2221-E-006-078 .
Publisher Copyright:
© 2018 Elsevier B.V.
PY - 2018/12/5
Y1 - 2018/12/5
N2 - In this study, 0.18 um pitch processed CMOS ICs with multiple thin film layers manufactured by United Microelectronics Corporation were used for the measurement of the surface deformation from the Scanning Electron Microscopy (SEM) images and Digital Image Correlation (DIC). The features of the natural surface were directly used for image correlation. Drift distortion and noises which arise from rasterizing, and the time-dependent nature of SEM image capturing and electromagnetic lenses was considered. A series of translation tests with various magnifications were made. Two SEM images of the sample, one each for before and after translation, were processed to extract the surface displacement from tiny changes in the SEM images of a thin film using DIC. Test results obtained from various sizes of the sub-image, noise filtering process, and the correlation approach were compared. A proper scheme was established for calibration and for obtaining a more accurate result of surface deformation of the CMOS ICs.
AB - In this study, 0.18 um pitch processed CMOS ICs with multiple thin film layers manufactured by United Microelectronics Corporation were used for the measurement of the surface deformation from the Scanning Electron Microscopy (SEM) images and Digital Image Correlation (DIC). The features of the natural surface were directly used for image correlation. Drift distortion and noises which arise from rasterizing, and the time-dependent nature of SEM image capturing and electromagnetic lenses was considered. A series of translation tests with various magnifications were made. Two SEM images of the sample, one each for before and after translation, were processed to extract the surface displacement from tiny changes in the SEM images of a thin film using DIC. Test results obtained from various sizes of the sub-image, noise filtering process, and the correlation approach were compared. A proper scheme was established for calibration and for obtaining a more accurate result of surface deformation of the CMOS ICs.
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U2 - 10.1016/j.mee.2018.09.007
DO - 10.1016/j.mee.2018.09.007
M3 - Article
AN - SCOPUS:85054684797
SN - 0167-9317
VL - 201
SP - 16
EP - 21
JO - Microelectronic Engineering
JF - Microelectronic Engineering
ER -