Dimer-flipping-assisted diffusion on a Si(001) surface

J. Zi, B. J. Min, Y. Lu, C. Z. Wang, K. M. Ho

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


The binding sites and diffusion pathways of Si adatoms on a c(4X2) reconstructed Si(001) surface are investigated by a tight-binding method with an environment-dependent silicon potential in conjunction with ab initio calculations using the Car-Parrinello method. A new diffusion pathway along the trough edge driven by dimer flipping is found with a barrier of 0.74 eV, comparable to that of 0.68 eV along the top of the dimer rows.

Original languageEnglish
Pages (from-to)4184-4186
Number of pages3
JournalApplied Physics Letters
Issue number25
Publication statusPublished - 2000 Dec 18

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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