Dimer-flipping-assisted diffusion on a Si(001) surface

J. Zi; B. J. Min; Y. Lu; C. Z. Wang; K. M. Ho

doi:10.1063/1.1336167

Dimer-flipping-assisted diffusion on a Si(001) surface

J. Zi
, B. J. Min
, Y. Lu
, C. Z. Wang
, K. M. Ho

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The binding sites and diffusion pathways of Si adatoms on a c(4X2) reconstructed Si(001) surface are investigated by a tight-binding method with an environment-dependent silicon potential in conjunction with ab initio calculations using the Car-Parrinello method. A new diffusion pathway along the trough edge driven by dimer flipping is found with a barrier of 0.74 eV, comparable to that of 0.68 eV along the top of the dimer rows.

Original language	English
Pages (from-to)	4184-4186
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	25
DOIs	https://doi.org/10.1063/1.1336167
Publication status	Published - 2000 Dec 18

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1336167

Cite this

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abstract = "The binding sites and diffusion pathways of Si adatoms on a c(4X2) reconstructed Si(001) surface are investigated by a tight-binding method with an environment-dependent silicon potential in conjunction with ab initio calculations using the Car-Parrinello method. A new diffusion pathway along the trough edge driven by dimer flipping is found with a barrier of 0.74 eV, comparable to that of 0.68 eV along the top of the dimer rows.",

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T1 - Dimer-flipping-assisted diffusion on a Si(001) surface

AU - Zi, J.

AU - Min, B. J.

AU - Lu, Y.

AU - Wang, C. Z.

AU - Ho, K. M.

PY - 2000/12/18

Y1 - 2000/12/18

N2 - The binding sites and diffusion pathways of Si adatoms on a c(4X2) reconstructed Si(001) surface are investigated by a tight-binding method with an environment-dependent silicon potential in conjunction with ab initio calculations using the Car-Parrinello method. A new diffusion pathway along the trough edge driven by dimer flipping is found with a barrier of 0.74 eV, comparable to that of 0.68 eV along the top of the dimer rows.

AB - The binding sites and diffusion pathways of Si adatoms on a c(4X2) reconstructed Si(001) surface are investigated by a tight-binding method with an environment-dependent silicon potential in conjunction with ab initio calculations using the Car-Parrinello method. A new diffusion pathway along the trough edge driven by dimer flipping is found with a barrier of 0.74 eV, comparable to that of 0.68 eV along the top of the dimer rows.

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DO - 10.1063/1.1336167

M3 - Article

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EP - 4186

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Dimer-flipping-assisted diffusion on a Si(001) surface

Abstract

All Science Journal Classification (ASJC) codes

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