Direct alpha Ta formation on TaN by resputtering for low resistive diffusion barriers

Jung Chih Tsao, Chuan Pu Liu, Ying Lang Wang, Kei Wei Chen

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


The Ta/TaN bilayer exhibits the best performance in the Cu metal multilevel interconnects, because it provides good coherence between Cu and dielectric layer. In the Ta/TaN bilayer, Ta has two phases: alpha-phase of body center cubic is preferred due to its lower resistivity (15-60 μΩ-cm), whereas beta-phase of tetragonal should be avoided due to high resistive (∼150-250 μΩ-cm). However, beta Ta most commonly forms on fee TaN. Here we provide a simple scheme to bypass this high resistive phase by resputtering TaN prior to Ta deposition. We found that, with surface treatment by argon ion bombardment for enough time, alpha Ta phase can be directly formed, which is supported both by X-ray diffraction and resistivity measurement. Depth profiles of all elements from Auger electron spectroscopy reveals that the surface treatment induces a nitrogen deficient surface layer due to different sputtering yield, which causes phase changes from fee TaN to hep Ta 2N followed by bcc Ta(N) and provide a favorable lattice constant for Ta alpha-phase formation.

Original languageEnglish
Pages (from-to)2582-2587
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Issue number5
Publication statusPublished - 2008 May 1

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • Biomedical Engineering
  • General Materials Science
  • Condensed Matter Physics


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