Direct evidence of 8:9 commensurate heterojunction formed between InN and AlN on c plane

C. L. Wu, C. H. Shen, H. W. Lin, H. M. Lee, S. Gwo

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)

Abstract

We show that, despite a large difference in lattice constants, high-quality InNAlN heterostructures can be formed on Si(111) due to the existence of "magic" ratios between the lattice constants of comprising material pairs: 2:1 (Si Si3 N4), 5:4 (AlNSi), and 8:9 (InNAlN). For InN growth on AlN with nitrogen polarity, by using reflection high-energy electron diffraction and cross-sectional transmission electron microscopy, we have found that the pseudomorphic to commensurate lattice transition occurs within the first monolayer of growth, resulting in an abrupt heterojunction at the atomic scale. This new route of lattice match allows the formation of commensurate and nearly strain-free interface with a common two-dimensional superlattice.

Original languageEnglish
Article number241916
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number24
DOIs
Publication statusPublished - 2005 Dec 19

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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