Direct evidence of 8:9 commensurate heterojunction formed between InN and AlN on c plane

C. L. Wu; C. H. Shen; H. W. Lin; H. M. Lee; S. Gwo

doi:10.1063/1.2146062

Direct evidence of 8:9 commensurate heterojunction formed between InN and AlN on c plane

C. L. Wu, C. H. Shen, H. W. Lin, H. M. Lee, S. Gwo

Department of Physics

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

We show that, despite a large difference in lattice constants, high-quality InNAlN heterostructures can be formed on Si(111) due to the existence of "magic" ratios between the lattice constants of comprising material pairs: 2:1 (Si Si3 N4), 5:4 (AlNSi), and 8:9 (InNAlN). For InN growth on AlN with nitrogen polarity, by using reflection high-energy electron diffraction and cross-sectional transmission electron microscopy, we have found that the pseudomorphic to commensurate lattice transition occurs within the first monolayer of growth, resulting in an abrupt heterojunction at the atomic scale. This new route of lattice match allows the formation of commensurate and nearly strain-free interface with a common two-dimensional superlattice.

Original language	English
Article number	241916
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	24
DOIs	https://doi.org/10.1063/1.2146062
Publication status	Published - 2005

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2146062

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title = "Direct evidence of 8:9 commensurate heterojunction formed between InN and AlN on c plane",

abstract = "We show that, despite a large difference in lattice constants, high-quality InNAlN heterostructures can be formed on Si(111) due to the existence of {"}magic{"} ratios between the lattice constants of comprising material pairs: 2:1 (Si Si3 N4), 5:4 (AlNSi), and 8:9 (InNAlN). For InN growth on AlN with nitrogen polarity, by using reflection high-energy electron diffraction and cross-sectional transmission electron microscopy, we have found that the pseudomorphic to commensurate lattice transition occurs within the first monolayer of growth, resulting in an abrupt heterojunction at the atomic scale. This new route of lattice match allows the formation of commensurate and nearly strain-free interface with a common two-dimensional superlattice.",

author = "Wu, {C. L.} and Shen, {C. H.} and Lin, {H. W.} and Lee, {H. M.} and S. Gwo",

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T1 - Direct evidence of 8:9 commensurate heterojunction formed between InN and AlN on c plane

AU - Wu, C. L.

AU - Shen, C. H.

AU - Lin, H. W.

AU - Lee, H. M.

AU - Gwo, S.

N1 - Funding Information: This work was supported in part by the National Science Council, Taiwan, Republic of China (NSC 94-2112-M-007-028).

PY - 2005

Y1 - 2005

N2 - We show that, despite a large difference in lattice constants, high-quality InNAlN heterostructures can be formed on Si(111) due to the existence of "magic" ratios between the lattice constants of comprising material pairs: 2:1 (Si Si3 N4), 5:4 (AlNSi), and 8:9 (InNAlN). For InN growth on AlN with nitrogen polarity, by using reflection high-energy electron diffraction and cross-sectional transmission electron microscopy, we have found that the pseudomorphic to commensurate lattice transition occurs within the first monolayer of growth, resulting in an abrupt heterojunction at the atomic scale. This new route of lattice match allows the formation of commensurate and nearly strain-free interface with a common two-dimensional superlattice.

AB - We show that, despite a large difference in lattice constants, high-quality InNAlN heterostructures can be formed on Si(111) due to the existence of "magic" ratios between the lattice constants of comprising material pairs: 2:1 (Si Si3 N4), 5:4 (AlNSi), and 8:9 (InNAlN). For InN growth on AlN with nitrogen polarity, by using reflection high-energy electron diffraction and cross-sectional transmission electron microscopy, we have found that the pseudomorphic to commensurate lattice transition occurs within the first monolayer of growth, resulting in an abrupt heterojunction at the atomic scale. This new route of lattice match allows the formation of commensurate and nearly strain-free interface with a common two-dimensional superlattice.

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Direct evidence of 8:9 commensurate heterojunction formed between InN and AlN on c plane

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